FQU6P25TU Specs and Replacement

Type Designator: FQU6P25TU

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 75 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: I-PAK

FQU6P25TU substitution

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FQU6P25TU datasheet

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FQU6P25TU

October 2008 QFET FQD6P25 / FQU6P25 250V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 21 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especia... See More ⇒

Detailed specifications: FQU4N20TU, FQU4N25TU, FQU5N40TU, FQU5N50CTU, FQU5N50TU, FQU5N60CTU, FQU5P20TU, FQU6N40CTU, IRFB4110, FQU7N10LTU, FQU7P06TU, FQU7P20TU, FQU8N25TU, FQU8P10TU, FQU9N25TU, IRF6216PBF, IRF6216PBF-1

Keywords - FQU6P25TU MOSFET specs

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