All MOSFET. FQU6P25TU Datasheet

 

FQU6P25TU Datasheet and Replacement


   Type Designator: FQU6P25TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: I-PAK
 

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FQU6P25TU Datasheet (PDF)

 ..1. Size:624K  fairchild semi
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FQU6P25TU

October 2008QFETFQD6P25 / FQU6P25 250V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especia

Datasheet: FQU4N20TU , FQU4N25TU , FQU5N40TU , FQU5N50CTU , FQU5N50TU , FQU5N60CTU , FQU5P20TU , FQU6N40CTU , IRF640N , FQU7N10LTU , FQU7P06TU , FQU7P20TU , FQU8N25TU , FQU8P10TU , FQU9N25TU , IRF6216PBF , IRF6216PBF-1 .

History: IPD50N06S2L-13 | MSK20P80GNF | IRFL9014TRPBF | FQU9N25TU | MSK30N03DF | LNG2N60 | FDD3682-F085

Keywords - FQU6P25TU MOSFET datasheet

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