All MOSFET. FQU7P20TU Datasheet

 

FQU7P20TU Datasheet and Replacement


   Type Designator: FQU7P20TU
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 110 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.69 Ohm
   Package: I-PAK
 

 FQU7P20TU substitution

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FQU7P20TU Datasheet (PDF)

 ..1. Size:731K  fairchild semi
 fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf pdf_icon

FQU7P20TU

April 2000TMQFETQFETQFETQFETFQD7P20 / FQU7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

 9.1. Size:707K  fairchild semi
 fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf pdf_icon

FQU7P20TU

May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

Datasheet: FQU5N50CTU , FQU5N50TU , FQU5N60CTU , FQU5P20TU , FQU6N40CTU , FQU6P25TU , FQU7N10LTU , FQU7P06TU , AO3400 , FQU8N25TU , FQU8P10TU , FQU9N25TU , IRF6216PBF , IRF6216PBF-1 , IRF6217PBF , IRF6217PBF-1 , IRF6218L .

History: IRF6217PBF

Keywords - FQU7P20TU MOSFET datasheet

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