FQU8P10TU Specs and Replacement
Type Designator: FQU8P10TU
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
Package: I-PAK
FQU8P10TU substitution
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FQU8P10TU datasheet
fqd8p10tf fqd8p10tm fqd8p10 fqu8p10 fqu8p10tu.pdf
TM QFET FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 12 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored... See More ⇒
Detailed specifications: FQU5N60CTU, FQU5P20TU, FQU6N40CTU, FQU6P25TU, FQU7N10LTU, FQU7P06TU, FQU7P20TU, FQU8N25TU, IRF3710, FQU9N25TU, IRF6216PBF, IRF6216PBF-1, IRF6217PBF, IRF6217PBF-1, IRF6218L, IRF6218PBF, IRF6218SPBF
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