All MOSFET. IRFZ42 Datasheet

 

IRFZ42 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ42

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: TO220

IRFZ42 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ42 Datasheet (PDF)

0.1. irfz40 irfz42.pdf Size:351K _st

IRFZ42
IRFZ42

9.1. irfz44ns 1.pdf Size:57K _philips

IRFZ42
IRFZ42

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

9.2. irfz44n 1.pdf Size:52K _philips

IRFZ42
IRFZ42

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

 9.3. irfz48n 1.pdf Size:53K _philips

IRFZ42
IRFZ42

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s

9.4. irfz40.pdf Size:181K _st

IRFZ42
IRFZ42

IRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRFZ40 50 V

 9.5. irfz44ns 1.pdf Size:57K _international_rectifier

IRFZ42
IRFZ42

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44NS TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a surface mounting VDS Drain-source voltage 55 Vplastic envelope using trench ID Drain current (DC) 49 Atechnology. The device feat

9.6. irfz48vspbf.pdf Size:179K _international_rectifier

IRFZ42
IRFZ42

PD - 95573IRFZ48VSPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 60Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 12mGl Fully Avalanche Ratedl Optimized for SMPS ApplicationsID = 72ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced proc

9.7. irfz44vpbf.pdf Size:226K _international_rectifier

IRFZ42
IRFZ42

PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

9.8. irfz44v.pdf Size:229K _international_rectifier

IRFZ42
IRFZ42

PD - 93957AIRFZ44VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mWG Fast Switching Fully Avalanche RatedID = 55A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

9.9. irfz48rspbf irfz48rlpbf.pdf Size:262K _international_rectifier

IRFZ42
IRFZ42

PD - 95761IRFZ48RSPbFIRFZ48RLPbFl Advanced Process Technology HEXFET Power MOSFETl Dynamic dv/dt RatingDl 175C Operating TemperatureVDSS = 60Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.018l Drop in Replacement of the IRFZ48Gfor Linear/Audio ApplicationsID = 50*Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier

9.10. irfz48r.pdf Size:136K _international_rectifier

IRFZ42
IRFZ42

PD - 93958IRFZ48RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.018G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ48 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

9.11. irfz44rpbf.pdf Size:221K _international_rectifier

IRFZ42
IRFZ42

PD - 94823IRFZ44RPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.028Gl Fully Avalanche Ratedl Drop in Replacement of the IRFZ44ID = 50*Afor Linear/Audio ApplicationsSl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from Internation

9.12. irfz46ns.pdf Size:149K _international_rectifier

IRFZ42
IRFZ42

PD - 9.1305BIRFZ46NSIRFZ46NL Advanced Process Technology HEXFET Power MOSFET Surface Mount (IRFZ46NS)D Low-profile through-hole (IRFZ46NL)VDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 0.0165 Fully Avalanche RatedGDescriptionID = 53AAdvanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing techniques to achie

9.13. irfz48.pdf Size:175K _international_rectifier

IRFZ42
IRFZ42

9.14. irfz48s.pdf Size:319K _international_rectifier

IRFZ42
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PD - 9.894AIRFZ48S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

9.15. irfz46n.pdf Size:85K _international_rectifier

IRFZ42
IRFZ42

PD-91277IRFZ46NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 16.5mG Fast Switching Fully Avalanche RatedID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

9.16. irfz44npbf.pdf Size:226K _international_rectifier

IRFZ42
IRFZ42

PD - 94787BIRFZ44NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 17.5ml Fully Avalanche RatedGl Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveex

9.17. irfz48ns.pdf Size:131K _international_rectifier

IRFZ42
IRFZ42

PD - 9.1408BIRFZ48NSIRFZ48NL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL)D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingStechniques to achie

9.18. auirfz48zstrl.pdf Size:252K _international_rectifier

IRFZ42
IRFZ42

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

9.19. irfz44e.pdf Size:96K _international_rectifier

IRFZ42
IRFZ42

PD - 91671BIRFZ44EHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 0.023G Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area. Thisbenefi

9.20. irfz48npbf.pdf Size:226K _international_rectifier

IRFZ42
IRFZ42

PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

9.21. irfz48pbf.pdf Size:2033K _international_rectifier

IRFZ42
IRFZ42

PD - 94956IRFZ48PbF Lead-Free1/29/04Document Number: 91294 www.vishay.com1IRFZ48PbFDocument Number: 91294 www.vishay.com2IRFZ48PbFDocument Number: 91294 www.vishay.com3IRFZ48PbFDocument Number: 91294 www.vishay.com4IRFZ48PbFDocument Number: 91294 www.vishay.com5IRFZ48PbFDocument Number: 91294 www.vishay.com6IRFZ48PbFTO-220AB Package Outline

9.22. auirfz46ns.pdf Size:245K _international_rectifier

IRFZ42
IRFZ42

PD - 96434AUTOMOTIVE GRADEAUIRFZ46NSAUIRFZ46NLFeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceV(BR)DSSD 55Vl Dynamic dV/dT Ratingl 175C Operating Temperaturel Fast Switching RDS(on) max.16.5ml Fully Avalanche RatedGl Repetitive Avalanche Allowed up to TjmaxID(Silicon Limited) 53Al Lead-Free, RoHS Compliantl Automotive Qualifi

9.23. irfz46npbf.pdf Size:215K _international_rectifier

IRFZ42
IRFZ42

PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

9.24. irfz48zlpbf irfz48zpbf irfz48zspbf.pdf Size:376K _international_rectifier

IRFZ42
IRFZ42

PD - 95574AIRFZ48ZPbFIRFZ48ZSPbFIRFZ48ZLPbFFeatures Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Repetitive Avalanche Allowed up to TjmaxG Lead-FreeID = 61ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques

9.25. irfz44.pdf Size:859K _international_rectifier

IRFZ42
IRFZ42

PD - 94943IRFZ44PbF Lead-Free01/14/04Document Number: 91291 www.vishay.com1IRFZ44PbFDocument Number: 91291 www.vishay.com2IRFZ44PbFDocument Number: 91291 www.vishay.com3IRFZ44PbFDocument Number: 91291 www.vishay.com4IRFZ44PbFDocument Number: 91291 www.vishay.com5IRFZ44PbFDocument Number: 91291 www.vishay.com6IRFZ44PbFTO-220AB Package Outline

9.26. irfz44espbf.pdf Size:234K _international_rectifier

IRFZ42
IRFZ42

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

9.27. irfz44r.pdf Size:153K _international_rectifier

IRFZ42
IRFZ42

PD - 93956IRFZ44RHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.028G Fast Switching Fully Avalanche RatedID = 50*A Drop in Replacement of the IRFZ44 Sfor Linear/Audio ApplicationsDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize a

9.28. irfz44vzl irfz44vzpbf irfz44vzspbf.pdf Size:301K _international_rectifier

IRFZ42
IRFZ42

PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

9.29. irfz46l.pdf Size:333K _international_rectifier

IRFZ42
IRFZ42

PD - 9.922AIRFZ46S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024 Fast SwitchingGID = 72A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

9.30. irfz44s.pdf Size:325K _international_rectifier

IRFZ42
IRFZ42

PD - 9.893AIRFZ44S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44S) Low-profile through-hole (IRFZ44L) 175C Operating Temperature RDS(on) = 0.028 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

9.31. irfz46zlpbf irfz46zpbf irfz46zspbf.pdf Size:375K _international_rectifier

IRFZ42
IRFZ42

PD - 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

9.32. irfz48s-l.pdf Size:192K _international_rectifier

IRFZ42
IRFZ42

PD - 9.894AIRFZ48S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ48S) Low-profile through-hole (IRFZ48L) 175C Operating Temperature RDS(on) = 0.018 Fast SwitchingGID = 50A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

9.33. irfz40.pdf Size:181K _international_rectifier

IRFZ42
IRFZ42

IRFZ40IRFZ40FIN - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORSTYPE VDSS RDS(on) IDIRFZ40 50 V

9.34. irfz44n 1.pdf Size:52K _international_rectifier

IRFZ42
IRFZ42

Philips Semiconductors Product specification N-channel enhancement mode IRFZ44N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 49 Afeatures very low on-s

9.35. irfz48n.pdf Size:102K _international_rectifier

IRFZ42
IRFZ42

PD - 91406IRFZ48NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 14m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

9.36. irfz46s.pdf Size:358K _international_rectifier

IRFZ42
IRFZ42

PD - 9.922AIRFZ46S/LHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 50V Surface Mount (IRFZ46S) Low-profile through-hole (IRFZ46L) 175C Operating Temperature RDS(on) = 0.024 Fast SwitchingGID = 72A SDescriptionThird Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon

9.37. auirfz44zstrl.pdf Size:327K _international_rectifier

IRFZ42
IRFZ42

PD - 97543AUIRFZ44ZAUTOMOTIVE GRADEAUIRFZ44ZSFeatures Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175C Operating Temperature DV(BR)DSS55V Fast Switching Repetitive Avalanche Allowed up toRDS(on) max.13.9mTjmaxG Lead-Free, RoHS CompliantID51AS Automotive Qualified *DDescriptionDSpecifically

9.38. irfz44zlpbf irfz44zpbf irfz44zspbf.pdf Size:382K _international_rectifier

IRFZ42
IRFZ42

PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

9.39. irfz46.pdf Size:154K _international_rectifier

IRFZ42
IRFZ42

Document Number: 90372 www.vishay.com1283Document Number: 90372 www.vishay.com1284Document Number: 90372 www.vishay.com1285Document Number: 90372 www.vishay.com1286Document Number: 90372 www.vishay.com1287Document Number: 90372 www.vishay.com1288Legal Disclaimer NoticeVishayNoticeThe products described herein were acquired by Vishay Intertechnology, Inc., as

9.40. irfz44ns.pdf Size:151K _international_rectifier

IRFZ42
IRFZ42

PD - 94153IRFZ44NSIRFZ44NL Advanced Process Technology Surface Mount (IRFZ44NS) HEXFET Power MOSFET Low-profile through-hole (IRFZ44NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0175DescriptionGAdvanced HEXFET Power MOSFETs from InternationalID = 49ARectifier utilize advanced processing techniques to achievee

9.41. irfz1x irfz2x irfz3x irfz4x.pdf Size:43K _international_rectifier

IRFZ42

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9.42. irfz44vs.pdf Size:145K _international_rectifier

IRFZ42
IRFZ42

PD - 94050AIRFZ44VSIRFZ44VLHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 16.5m Fully Avalanche RatedG Optimized for SMPS ApplicationsID = 55ASDescriptionAdvanced HEXFET Power MOSFETs from International Rectifier utilize advancedprocessing te

9.43. irfz48v.pdf Size:111K _international_rectifier

IRFZ42
IRFZ42

PD - 93959AIRFZ48VHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to ac

9.44. irfz48vs.pdf Size:282K _international_rectifier

IRFZ42
IRFZ42

PD - 94051AIRFZ48VSHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 12mG Fast Switching Fully Avalanche RatedID = 72A Optimized for SMPS Applications SDescriptionAdvanced HEXFET Power MOSFETs from International Rectifierutilize advanced processing techniques to a

9.45. irfz46nlpbf.pdf Size:679K _international_rectifier

IRFZ42
IRFZ42

PD - 95158IRFZ46NSPbFIRFZ46NLPbF Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ46NS) Low-profile through-hole (IRFZ46NL)D 175C Operating TemperatureVDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.0165 Lead-FreeGDescriptionID = 53A Advanced HEXFET Power MOSFETs from InternationalSRectifier utilize advanced processing t

9.46. irfz44n.pdf Size:100K _international_rectifier

IRFZ42
IRFZ42

PD - 94053IRFZ44NHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 55V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 17.5mG Fast Switching Fully Avalanche RatedID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistan

9.47. irfz44nlpbf irfz44nspbf.pdf Size:334K _international_rectifier

IRFZ42
IRFZ42

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

9.48. irfz44epbf.pdf Size:150K _international_rectifier

IRFZ42
IRFZ42

PD - 94822IRFZ44EPbFHEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating DVDSS = 60V 175C Operating Temperature Fast SwitchingRDS(on) = 0.023 Fully Avalanche RatedG Lead-FreeID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance per silicon area.

9.49. irfz44es.pdf Size:163K _international_rectifier

IRFZ42
IRFZ42

PD - 9.1714IRFZ44ES/LPRELIMINARYHEXFET Power MOSFET Advanced Process TechnologyDVDSS = 60V Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 175C Operating TemperatureRDS(on) = 0.023G Fast Switching Fully Avalanche RatedID = 48ASDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing techniques to achieve

9.50. irfz48nlpbf.pdf Size:301K _international_rectifier

IRFZ42
IRFZ42

IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS

9.51. irfz48n 1.pdf Size:53K _international_rectifier

IRFZ42
IRFZ42

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s

9.52. auirfz44vzstrl.pdf Size:274K _international_rectifier

IRFZ42
IRFZ42

PD - 96354AUTOMOTIVE GRADEAUIRFZ44VZSHEXFET Power MOSFETFeaturesl Advanced Process Technology DV(BR)DSS60Vl Ultra Low On-ResistanceRDS(on) typ.9.6ml 175C Operating Temperaturel Fast Switching Gmax. 12ml Repetitive Avalanche Allowed up to TjmaxSl Lead-Free, RoHS Compliant ID 57A l Automotive Qualified *DescriptionDSpecifically designed for Automo

9.53. irfz46.pdf Size:105K _njs

IRFZ42
IRFZ42

9.54. irfz44a.pdf Size:503K _samsung

IRFZ42
IRFZ42

Advanced Power MOSFETFEATURESBVDSS = 60 V Avalanche Rugged TechnologyRDS(on) = 0.024 Rugged Gate Oxide Technology Lower Input CapacitanceID = 50 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 60V Lower RDS(ON) : 0.020 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum Ratin

9.55. irfz48r irfz48rpbf sihfz48r.pdf Size:1061K _vishay

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IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

9.56. irfz48 irfz48pbf sihfz48.pdf Size:1517K _vishay

IRFZ42
IRFZ42

IRFZ48, SiHFZ48Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 0.018 RoHS* Ultra Low On-ResistanceCOMPLIANTQg (Max.) (nC) 110 Very Low Thermal ResistanceQgs (nC) 29 175 C Operating TemperatureQgd (nC) 36 Fast SwitchingConfiguration Single E

9.57. irfz44s irfz44l sihfz44s sihfz44l.pdf Size:790K _vishay

IRFZ42
IRFZ42

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S

9.58. irfz44l irfz44s irfz44spbf sihfz44l sihfz44s.pdf Size:815K _vishay

IRFZ42
IRFZ42

IRFZ44S, IRFZ44L, SiHFZ44S, SiHFZ44LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) 60 Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.028 Surface Mount (IRFZ44S, SiHFZ44S)Qg (Max.) (nC) 67 Low-Profile Through-Hole (IRFZ44L, SiHFZ44L) 175 C Operating TemperatureQgs (nC) 18 Fast S

9.59. irfz48rs irfz48rl sihfz48rs sihfz48rl.pdf Size:203K _vishay

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IRFZ42

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

9.60. irfz48r sihfz48r.pdf Size:1059K _vishay

IRFZ42
IRFZ42

IRFZ48R, SiHFZ48RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dt Rating RoHS*COMPLIANTQg (Max.) (nC) 110 175 C Operating Temperature Fast SwitchingQgs (nC) 29 Fully Avalanche RatedQgd (nC) 36 Drop in Replacement of the SiH

9.61. irfz44r sihfz44r.pdf Size:1287K _vishay

IRFZ42
IRFZ42

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

9.62. irfz44pbf sihfz44.pdf Size:1542K _vishay

IRFZ42
IRFZ42

IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

9.63. irfz44r irfz44rpbf sihfz44r.pdf Size:1289K _vishay

IRFZ42
IRFZ42

IRFZ44R, SiHFZ44RVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Advanced Process TechnologyVDS (V) 60 Available Ultra Low On-ResistanceRDS(on) ()VGS = 10 V 0.028 RoHS* Dynamic dV/dt RatingCOMPLIANTQg (Max.) (nC) 67 175 C Operating Temperature Fast SwitchingQgs (nC) 18 Fully Avalanche RatedQgd (nC) 25 Drop in Replacement of the

9.64. irfz48l irfz48s sihfz48l sihfz48s.pdf Size:377K _vishay

IRFZ42
IRFZ42

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48LVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Surface Mount (IRFZ48S, SiHFZ48S)Qg (Max.) (nC) 110 Low-Profile Through-Hole (IRFZ48L, SiHFZ48L)Qgs (nC) 29 175 C Operating TemperatureQgd (nC)

9.65. irfz48rl irfz48rlpbf irfz48rs irfz48rspbf sihfz48rl sihfz48rs.pdf Size:228K _vishay

IRFZ42
IRFZ42

IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RLVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 60 Definition Advanced Process TechnologyRDS(on) ()VGS = 10 V 0.018 Dynamic dV/dtQg (Max.) (nC) 110 175 C Operating TemperatureQgs (nC) 29 Fast SwitchingQgd (nC) 36 Fully Avalanche RatedConfiguration Si

9.66. irfz44 sihfz44.pdf Size:1540K _vishay

IRFZ42
IRFZ42

IRFZ44, SiHFZ44Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028RoHS* Fast SwitchingQg (Max.) (nC) 67COMPLIANT Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECD

9.67. irfz40pbf sihfz40.pdf Size:1476K _vishay

IRFZ42
IRFZ42

IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio

9.68. irfz40 sihfz40.pdf Size:1475K _vishay

IRFZ42
IRFZ42

IRFZ40, SiHFZ40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60 175 C Operating TemperatureRDS(on) ()VGS = 10 V 0.028 Fast SwitchingQg (Max.) (nC) 67 Ease of ParallelingQgs (nC) 18Qgd (nC) 25 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDESCRIPTIONThird generatio

9.69. auirfz44z auirfz44zs.pdf Size:713K _infineon

IRFZ42
IRFZ42

AUIRFZ44Z AUTOMOTIVE GRADE AUIRFZ44ZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 13.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 51A Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed

9.70. irfz44zpbf irfz44zspbf irfz44zlpbf.pdf Size:382K _infineon

IRFZ42
IRFZ42

PD - 95379AIRFZ44ZPbFIRFZ44ZSPbFFeatures Advanced Process TechnologyIRFZ44ZLPbF Ultra Low On-ResistanceHEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating TemperatureD Fast SwitchingVDSS = 55V Repetitive Avalanche Allowed up to Tjmax Lead-FreeRDS(on) = 13.9mGDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

9.71. irfz44vpbf.pdf Size:226K _infineon

IRFZ42
IRFZ42

PD - 94826AIRFZ44VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt Rating VDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 16.5ml Fully Avalanche Rated Gl Optimized for SMPS ApplicationsID = 55ASl Lead-FreeDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

9.72. irfz48vpbf.pdf Size:223K _infineon

IRFZ42
IRFZ42

PD - 94992AIRFZ48VPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 60Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 12ml Fully Avalanche RatedGl Optimized for SMPS ApplicationsID = 72Al Lead-FreeSDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced pro

9.73. irfz44espbf irfz44elpbf.pdf Size:234K _infineon

IRFZ42
IRFZ42

PD - 95572IRFZ44ESPbFIRFZ44ELPbFHEXFET Power MOSFETl Advanced Process Technologyl Surface Mount (IRFZ44ES)DVDSS = 60Vl Low-profile through-hole (IRFZ44EL)l 175C Operating TemperatureRDS(on) = 0.023l Fast SwitchingGl Fully Avalanche RatedID = 48Al Lead-FreeSDescriptionFifth Generation HEXFETs from International Rectifier utilize advancedprocessing tec

9.74. irfz44vz irfz44vzs irfz44vzl.pdf Size:301K _infineon

IRFZ42
IRFZ42

PD - 94755IRFZ44VZAUTOMOTIVE MOSFETIRFZ44VZSIRFZ44VZLFeaturesHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 60V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12mGDescriptionID = 57ASpecifically designed for Automotive applications,Sthis HEXFET Power MOSFE

9.75. irfz44npbf.pdf Size:150K _infineon

IRFZ42
IRFZ42

PD - 94787IRFZ44NPbFHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 17.5m Fully Avalanche RatedG Lead-FreeID = 49ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely

9.76. irfz48npbf.pdf Size:226K _infineon

IRFZ42
IRFZ42

PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

9.77. irfz46npbf.pdf Size:215K _infineon

IRFZ42
IRFZ42

PD - 94952AIRFZ46NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast Switching RDS(on) = 16.5mGl Fully Avalanche Ratedl Lead-FreeID = 53ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

9.78. irfz46zpbf irfz46zspbf irfz46zlpbf.pdf Size:375K _infineon

IRFZ42
IRFZ42

PD - 95562AIRFZ46ZPbFIRFZ46ZSPbFFeaturesIRFZ46ZLPbF Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingDVDSS = 55V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 13.6mG Lead-FreeDescriptionID = 51ASThis HEXFET Power MOSFET utilizes the latestprocessing techniqu

9.79. irfz44vzpbf irfz44vzspbf irfz44vzlpbf.pdf Size:372K _infineon

IRFZ42
IRFZ42

PD - 95947AIRFZ44VZPbFIRFZ44VZSPbFIRFZ44VZLPbFFeaturesHEXFET Power MOSFET Advanced Process Technology Ultra Low On-ResistanceD 175C Operating TemperatureVDSS = 60V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 12m Lead-FreeGDescriptionID = 57AThis HEXFET Power MOSFET utilizes the latestSprocessing techniques to achieve extremel

9.80. irfz48nspbf irfz48nlpbf.pdf Size:301K _infineon

IRFZ42
IRFZ42

IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS

9.81. irfz44nspbf irfz44nlpbf.pdf Size:334K _infineon

IRFZ42
IRFZ42

IRFZ44NSPbFl IRFZ44NLPbFl l l D DSS l l l DS(on) Description G D

9.82. auirfz48z auirfz48zs.pdf Size:252K _infineon

IRFZ42
IRFZ42

PD - 97612AAUTOMOTIVE GRADEAUIRFZ48ZAUIRFZ48ZSFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureV(BR)DSS55Vl Fast Switchingl Repetitive Avalanche Allowed upRDS(on) max.11mGto Tjmaxl Lead-Free, RoHS CompliantID61ASl Automotive Qualified *DescriptionSpecifically designed for Automot

9.83. auirfz44vzs.pdf Size:654K _infineon

IRFZ42
IRFZ42

AUTOMOTIVE GRADE AUIRFZ44VZS HEXFET Power MOSFET Features Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 9.6m 175C Operating Temperature Fast Switching max. 12m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID 57A Automotive Qualified * D Description S Specifically designed

9.84. auirfz48n.pdf Size:220K _infineon

IRFZ42
IRFZ42

PD - 97732AUTOMOTIVE GRADEAUIRFZ48NHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.11ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 14ml Fast SwitchingSID69Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDesc

9.85. lirfz44n.pdf Size:252K _lrc

IRFZ42
IRFZ42

LESHAN RADIO COMPANY, LTD.55V N-Channel Mode MOSFET VDS=55V LIRFZ44NRDS(ON), Vgs@10V, Ids@25A =17.5m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche RatedTO-220DGSAbsolute Maximum RatingsParameter Max. UnitsID @ TC = 25C Continuous Drain Current, VGS @ 10V 49ID @ TC = 10

9.86. irfz44z.pdf Size:246K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ZIIRFZ44ZFEATURESStatic drain-source on-resistance:RDS(on) 13.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.87. irfz48zs.pdf Size:258K _inchange_semiconductor

IRFZ42
IRFZ42

Isc N-Channel MOSFET Transistor IRFZ48ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.88. irfz44zs.pdf Size:258K _inchange_semiconductor

IRFZ42
IRFZ42

Isc N-Channel MOSFET Transistor IRFZ44ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.89. irfz44v.pdf Size:245K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44V IIRFZ44VFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.90. irfz46ns.pdf Size:258K _inchange_semiconductor

IRFZ42
IRFZ42

isc N-Channel MOSFET Transistor IRFZ46NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.91. irfz48.pdf Size:249K _inchange_semiconductor

IRFZ42
IRFZ42

isc N-Channel MOSFET Transistor IRFZ48FEATURESStatic drain-source on-resistance:RDS(on) 35mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

9.92. irfz46n.pdf Size:246K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46N IIRFZ46NFEATURESStatic drain-source on-resistance:RDS(on) 16.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.93. irfz48ns.pdf Size:251K _inchange_semiconductor

IRFZ42
IRFZ42

isc N-Channel MOSFET Transistor IRFZ48NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.94. irfz45.pdf Size:248K _inchange_semiconductor

IRFZ42
IRFZ42

isc N-Channel MOSFET Transistor IRFZ45FEATURESStatic drain-source on-resistance:RDS(on) 35mFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONDC/DC ConverterIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

9.95. irfz46zs.pdf Size:258K _inchange_semiconductor

IRFZ42
IRFZ42

Isc N-Channel MOSFET Transistor IRFZ46ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.96. irfz44e.pdf Size:246K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44E IIRFZ44EFEATURESStatic drain-source on-resistance:RDS(on) 23mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

9.97. irfz46z.pdf Size:246K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ46ZIIRFZ46ZFEATURESStatic drain-source on-resistance:RDS(on) 13.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.98. irfz44cn.pdf Size:145K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44CN FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

9.99. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES Drain Current ID= 64A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.014(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

9.100. irfz44vzs.pdf Size:257K _inchange_semiconductor

IRFZ42
IRFZ42

Isc N-Channel MOSFET Transistor IRFZ44VZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

9.101. irfz44vz.pdf Size:245K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44VZIIRFZ44VZFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.102. irfz44ns.pdf Size:257K _inchange_semiconductor

IRFZ42
IRFZ42

isc N-Channel MOSFET Transistor IRFZ44NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.103. irfz48v.pdf Size:246K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48V IIRFZ48VFEATURESStatic drain-source on-resistance:RDS(on) 12mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

9.104. irfz48vs.pdf Size:213K _inchange_semiconductor

IRFZ42
IRFZ42

isc N-Channel MOSFET Transistor IRFZ48VSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

9.105. irfz44n.pdf Size:100K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ44N FEATURES Drain Current ID=49A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.032(Max) Fast Switching DESCRIPTION Designed for low voltage, high speed switching applications in power supplies, converters and power motor

9.106. irfz44es.pdf Size:205K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ44ESFEATURESWith TO-263(D2PAK) packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2

9.107. irfz48z.pdf Size:246K _inchange_semiconductor

IRFZ42
IRFZ42

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFZ48Z IIRFZ48ZFEATURESStatic drain-source on-resistance:RDS(on) 11mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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