IRF634NLPBF Specs and Replacement

Type Designator: IRF634NLPBF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 84 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.435 Ohm

Package: TO-262

IRF634NLPBF substitution

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IRF634NLPBF datasheet

 ..1. Size:125K  vishay
 irf634nlpbf irf634nspbf.pdf pdf_icon

IRF634NLPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Available Dynamic dV/dt Rating RoHS* RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature COMPLIANT Qg (Max.) (nC) 34 Fast Switching Qgs (nC) 6.5 Fully Avalanche Rated Ease of Paralleling Qgd (nC... See More ⇒

 6.1. Size:158K  vishay
 irf634n irf634nl irf634ns sihf634n sihf634nl sihf634ns.pdf pdf_icon

IRF634NLPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) ( )VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC... See More ⇒

 7.1. Size:244K  international rectifier
 irf634n-s-lpbf.pdf pdf_icon

IRF634NLPBF

PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175 C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435 G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rect... See More ⇒

 7.2. Size:301K  international rectifier
 irf634n.pdf pdf_icon

IRF634NLPBF

PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175 C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435 Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processin... See More ⇒

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Detailed specifications: IRF624PBF, IRF624SPBF, IRF630H, IRF630NLPBF, IRF630NPBF, IRF630NSPBF, IRF630PBF, IRF630SPBF, IRLB4132, IRF634NSPBF, IRF634PBF, IRF634SPBF, IRF640FP, IRF640H, IRF640LPBF, IRF640NLPBF, IRF640NPBF

Keywords - IRF634NLPBF MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.