IRF6892S Specs and Replacement
Type Designator: IRF6892S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 850 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
Package: DIRECTFET
IRF6892S substitution
- MOSFET ⓘ Cross-Reference Search
IRF6892S datasheet
irf6892s.pdf
PD - 97770 IRF6892STRPbF IRF6892STR1PbF DirectFET plus MOSFET with Schottky Diode l RoHS Compliant and Halogen Free Typical values (unless otherwise specified) l Low Profile (... See More ⇒
irf6898mpbf.pdf
IRF6898MPbF IRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified) l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diode l Low Profile (... See More ⇒
irf6894mpbf.pdf
PD - 97633A IRF6894MPbF IRF6894MTRPbF DirectFET plus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒
irf6893m.pdf
PD - 97761 IRF6893MPbF IRF6893MTRPbF DirectFET plus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) l Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (... See More ⇒
Detailed specifications: IRF6724MPBF, IRF6725MPBF, IRF6726MPBF, IRF6727MPBF, IRF6728MPBF, IRF6729MPBF, IRF6802SD, IRF6811SPBF, 20N50, IRF6893M, IRF6894MPBF, IRF6898MPBF, IRF7103IPBF, IRF7103PBF-1, IRF7105PBF-1, IRF710PBF, IRF710SPBF
Keywords - IRF6892S MOSFET specs
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History: CMPDM303NH | BUK764R3-40B
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