All MOSFET. IRF6893M Datasheet

 

IRF6893M Datasheet and Replacement


   Type Designator: IRF6893M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 29 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 83 nS
   Cossⓘ - Output Capacitance: 1140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: DIRECTFET
 

 IRF6893M substitution

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IRF6893M Datasheet (PDF)

 ..1. Size:215K  international rectifier
 irf6893m.pdf pdf_icon

IRF6893M

PD - 97761IRF6893MPbFIRF6893MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

 ..2. Size:215K  international rectifier
 irf6893mpbf irf6893mtrpbf.pdf pdf_icon

IRF6893M

PD - 97761IRF6893MPbFIRF6893MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

 8.1. Size:243K  international rectifier
 irf6898mpbf.pdf pdf_icon

IRF6893M

IRF6898MPbFIRF6898MTRPbF HEXFET Power MOSFET plus Schottky Diode Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Integrated Monolithic Schottky Diodel Low Profile (

 8.2. Size:248K  international rectifier
 irf6894mpbf.pdf pdf_icon

IRF6893M

PD - 97633AIRF6894MPbFIRF6894MTRPbFDirectFETplus MOSFET with Schottky Diode l RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified)l Integrated Monolithic Schottky DiodeVDSS VGS RDS(on) RDS(on) l Low Profile (

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History: OSG65R099H4SZF | MEE72962-G | OSG55R140HF | HGD2K4N25ML | DMS3016SFG | AP4527GH | NCE0103Y

Keywords - IRF6893M MOSFET datasheet

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