All MOSFET. 2SJ209 Equivalents Search

 

2SJ209 Specs and Replacement


   Type Designator: 2SJ209
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 60 Ohm
   Package: SC59
 

 2SJ209 substitution

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2SJ209 Specs

 ..1. Size:422K  nec
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2SJ209

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 ..2. Size:1232K  kexin
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2SJ209

SMD Type MOSFET P-Channel MOSFET 2SJ209 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-100V 1 2 ID =-0.1 A +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 RDS(ON) 60 (VGS =-10V) RDS(ON) 100 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS ... See More ⇒

 0.1. Size:1244K  kexin
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2SJ209

SMD Type MOSFET P-Channel MOSFET 2SJ209 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) =-100V ID =-0.1 A 1 2 +0.02 RDS(ON) 60 (VGS =-10V) +0.1 0.15 -0.02 0.95-0.1 +0.1 1.9-0.2 RDS(ON) 100 (VGS =-4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage ... See More ⇒

 9.1. Size:245K  toshiba
2sj200.pdf pdf_icon

2SJ209

2SJ200 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ200 High Power Amplifier Application Unit mm High breakdown voltage VDSS = -180 V High forward transfer admittance Y = 4.0 S (typ.) fs Complementary to 2SK1529 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -180 V Gate-source voltage VGSS 20 V Dr... See More ⇒

Detailed specifications: 2SJ199 , 2SJ202 , 2SJ203 , 2SJ204 , 2SJ205 , 2SJ206 , 2SJ207 , 2SJ208 , SPP20N60C3 , 2SJ210 , 2SJ211 , 2SJ212 , 2SJ218 , 2SJ243 , 2SJ302 , 2SJ303 , 2SJ324 .

Keywords - 2SJ209 MOSFET specs

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