IRF7309QPBF MOSFET Datasheet: NP-Ch, 30V, 4.7A. Full specification with pinout and replacement list

IRF7309QPBF Specs and Replacement

Type Designator: IRF7309QPBF

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SO-8

IRF7309QPBF substitution

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IRF7309QPBF datasheet

..1. Size:1962K international rectifier
irf7309qpbf.pdf pdf_icon

PD - 96135A IRF7309QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 N-Ch P-Ch l Dual N and P Channel MOSFET S1 D1 l Surface Mount 2 7 G1 D1 l Available in Tape & Reel VDSS 30V -30V 3 6 l 150 C Operating Temperature S2 D2 l Lead-Free 4 5 RDS(on) 0.050 0.10 G2 D2 P-CHANNEL MOSFET Description Top View These HEXF... See More ⇒

6.1. Size:456K 1
auirf7309q.pdf pdf_icon

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance 2 7 VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6 S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.10 4 5 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 4.7A -3.5A ... See More ⇒

6.2. Size:456K infineon
auirf7309q.pdf pdf_icon

7.1. Size:162K international rectifier
irf7309.pdf pdf_icon

PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 30V -30V Available in Tape & Reel 3 6 S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET RDS(on) 0.050 0.10 Top View Description Fifth Generation HEXFET... See More ⇒