PD - 96135AIRF7309QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8 N-Ch P-Chl Dual N and P Channel MOSFETS1 D1l Surface Mount2 7G1 D1l Available in Tape & ReelVDSS 30V -30V3 6l 150C Operating TemperatureS2 D2l Lead-Free45RDS(on) 0.050 0.10G2 D2P-CHANNEL MOSFETDescriptionTop ViewThese HEXF

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A

PD - 9.1243BIRF7309PRELIMINARYHEXFET Power MOSFETGeneration V TechnologyN-CHANNEL MOSFETUltra Low On-Resistance1 8 N-Ch P-ChS1 D1Dual N and P Channel Mosfet2 7G1 D1Surface MountVDSS 30V -30VAvailable in Tape & Reel 3 6S2 D2Dynamic dv/dt Rating45G2 D2Fast SwitchingP-CHANNEL MOSFET RDS(on) 0.050 0.10Top ViewDescriptionFifth Generation HEXFET

IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind

IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind

PD - 96086IRF7309IPbF Lead-FreeDescriptionwww.irf.com 107/07/06IRF7309IPbF2 www.irf.comIRF7309IPbFwww.irf.com 3IRF7309IPbF4 www.irf.comIRF7309IPbFwww.irf.com 5IRF7309IPbF6 www.irf.comIRF7309IPbFwww.irf.com 7IRF7309IPbF8 www.irf.comIRF7309IPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance

IRF7309TRPBFwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at