All MOSFET. IRF7313PBF-1 Datasheet

 

IRF7313PBF-1 Datasheet and Replacement


   Type Designator: IRF7313PBF-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO-8
 

 IRF7313PBF-1 substitution

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IRF7313PBF-1 Datasheet (PDF)

 ..1. Size:204K  international rectifier
irf7313pbf-1.pdf pdf_icon

IRF7313PBF-1

IRF7313PbF-1HEXFET Power MOSFETVDS 30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 (@V = 10V)GS3 6S2 D2Qg (typical) 22 nC45G2 D2ID 6.5 ASO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Enviro

 4.1. Size:205K  international rectifier
irf7313pbf.pdf pdf_icon

IRF7313PBF-1

PD - 95039IRF7313PbFHEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N-Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-FreeRDS(on) = 0.029Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 7.1. Size:298K  1
irf7313q.pdf pdf_icon

IRF7313PBF-1

PD - 96125IRF7313QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2RDS(on) = 0.029l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

 7.2. Size:105K  international rectifier
irf7313.pdf pdf_icon

IRF7313PBF-1

PD - 9.1480AIRF7313PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

Datasheet: IRF7309PBF-1 , IRF7309QPBF , IRF730ALPBF , IRF730APBF , IRF730ASPBF , IRF730B , IRF730PBF , IRF730SPBF , 50N06 , IRF7313QPBF , IRF7316PBF-1 , IRF7316QPBF , IRF7321D2PBF , IRF7322D1PBF , IRF7324D1PBF , IRF7324PBF-1 , IRF7326D2PBF .

History: JFPC7N60C | WMS02P15TS | WMS13P04T1 | KN0606L | IRFR210PBF | APT12060B2VFR | STB5NK50Z-1

Keywords - IRF7313PBF-1 MOSFET datasheet

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