All MOSFET. IRF7313PBF-1 Datasheet

 

IRF7313PBF-1 Datasheet and Replacement


   Type Designator: IRF7313PBF-1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.9 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SO-8
      - MOSFET Cross-Reference Search

 

IRF7313PBF-1 Datasheet (PDF)

 ..1. Size:204K  international rectifier
irf7313pbf-1.pdf pdf_icon

IRF7313PBF-1

IRF7313PbF-1HEXFET Power MOSFETVDS 30 V 1 8S1 D1RDS(on) max 2 7G1 D10.029 (@V = 10V)GS3 6S2 D2Qg (typical) 22 nC45G2 D2ID 6.5 ASO-8(@T = 25C)ATop ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Enviro

 4.1. Size:205K  international rectifier
irf7313pbf.pdf pdf_icon

IRF7313PBF-1

PD - 95039IRF7313PbFHEXFET Power MOSFETl Generation V Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N-Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Fully Avalanche Rated4 5G2 D2l Lead-FreeRDS(on) = 0.029Top ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextreme

 7.1. Size:298K  1
irf7313q.pdf pdf_icon

IRF7313PBF-1

PD - 96125IRF7313QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = 30Vl Dual N- Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2RDS(on) = 0.029l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

 7.2. Size:105K  international rectifier
irf7313.pdf pdf_icon

IRF7313PBF-1

PD - 9.1480AIRF7313PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = 30V Dual N-Channel MOSFET2 7G1 D1 Surface Mount3 6S2 D2 Fully Avalanche Rated4 5G2 D2RDS(on) = 0.029T op V iewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely l

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFP21N60L | STD6N60M2

Keywords - IRF7313PBF-1 MOSFET datasheet

 IRF7313PBF-1 cross reference
 IRF7313PBF-1 equivalent finder
 IRF7313PBF-1 lookup
 IRF7313PBF-1 substitution
 IRF7313PBF-1 replacement

 

 
Back to Top

 


 
.