IRF7341G
MOSFET. Datasheet pdf. Equivalent
Type Designator: IRF7341G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 5.1
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 7.7
nS
Cossⓘ -
Output Capacitance: 190
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
SO-8
IRF7341G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRF7341G
Datasheet (PDF)
..1. Size:199K international rectifier
irf7341gpbf.pdf 
IRF7341GPbFHEXFET Power MOSFET Advanced Process TechnologyVDSS RDS(on) max ID Dual N-Channel MOSFET Ultra Low On-Resistance 55V 0.050@VGS = 10V 5.1A 175C Operating Temperature0.065@VGS = 4.5V 4.42A Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-FreeDescription1 8S1 D1These HEXFET Power MOSFETs in a Dual SO-8 package2 7ut
7.1. Size:403K 1
auirf7341q.pdf
AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co
7.2. Size:156K 1
irf7341q.pdf
PD - 94391BIRF7341QTypical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel InjectionVDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1ABenefits Advanced Process Technology0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax
7.3. Size:134K international rectifier
irf7341.pdf
PD -91703IRF7341HEXFET Power MOSFET Generation V Technology1 8S1 D1 Ultra Low On-ResistanceVDSS = 55V2 7 Dual N-Channel MosfetG1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingRDS(on) = 0.050 Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing technique
7.4. Size:137K international rectifier
irf7341q.pdf
PD - 94391AIRF7341QTypical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel InjectionVDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1ABenefits Advanced Process Technology0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax
7.5. Size:138K international rectifier
irf7341ipbf.pdf
PD-95087IRF7341IPbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MosfetVDSS = 55V2 7l Surface MountG1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc
7.6. Size:421K infineon
auirf7341q.pdf
AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7G1 D1RDS(on) typ. 0.0433 6 Ultra Low On-Resistance S2 D24 5 max. Logic Level Gate Drive G2 D20.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175C Operating Temperature Lead-Free, RoHS Co
7.7. Size:158K infineon
irf7341pbf.pdf
PD -95199IRF7341PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel Mosfet S1 D1VDSS = 55Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingRDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced
7.8. Size:2130K slkor
irf7341.pdf
IRF734160V Dual N-Channel MOSFETDescriptionThis Dual N-Channel MOSFET uses advanced trench technology andSOP-8design to provide excellent R with low gate charge. D1DS(on)D1It can be used in a wide variety of applications.D2D2S1G1S2FeaturesG21) V =60V,I =5 A,R
7.9. Size:952K cn vbsemi
irf7341trpbf.pdf
IRF7341TRPBFwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Cha
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