IRF7341G - описание и поиск аналогов

IRF7341GPbF HEXFET Power MOSFET Advanced Process Technology VDSS RDS(on) max ID Dual N-Channel MOSFET Ultra Low On-Resistance 55V 0.050@VGS = 10V 5.1A 175 C Operating Temperature 0.065@VGS = 4.5V 4.42A Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free Description 1 8 S1 D1 These HEXFET Power MOSFET s in a Dual SO-8 package 2 7 ut

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175 C Operating Temperature Lead-Free, RoHS Co

PD - 94391B IRF7341Q Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection VDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1A Benefits Advanced Process Technology 0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = 55V 2 7 Dual N-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.050 Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

PD - 94391A IRF7341Q Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection VDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1A Benefits Advanced Process Technology 0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175 C Operating Temperature Repetitive Avalanche Allowed up to Tjmax

PD-95087 IRF7341IPbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 S1 D1 l Dual N-Channel Mosfet VDSS = 55V 2 7 l Surface Mount G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching RDS(on) = 0.050 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanc

PD -95199 IRF7341PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 1 8 l Dual N-Channel Mosfet S1 D1 VDSS = 55V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 G2 D2 l Fast Switching RDS(on) = 0.050 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced

AUTOMOTIVE GRADE AUIRF7341Q VDSS Features 1 8 55V S1 D1 Advanced Planar Technology 2 7 G1 D1 RDS(on) typ. 0.043 3 6 Ultra Low On-Resistance S2 D2 4 5 max. Logic Level Gate Drive G2 D2 0.050 Dual N Channel MOSFET Top View ID 5.1A Surface Mount Available in Tape & Reel 175 C Operating Temperature Lead-Free, RoHS Co

IRF7341 60V Dual N-Channel MOSFET Description This Dual N-Channel MOSFET uses advanced trench technology and SOP-8 design to provide excellent R with low gate charge. D1 DS(on) D1 It can be used in a wide variety of applications. D2 D2 S1 G1 S2 Features G2 1) V =60V,I =5 A,R

IRF7341TRPBF www.VBsemi.tw Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Cha