SD200DC Datasheet and Replacement

High-Speed AnalogN-Channel Enhancement-ModeLLCDMOS FETSSD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203FEATURES DESCRIPTION High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz The SD200 series is manufactured utilizing Calogics Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz proprietary DMOS design and processing techniques

8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2004 BVdss Rds(on) IDN-Channel 20V 0.125 3.0AS1 D2 D2P-Channel -20V 0.20 -2.5A N

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesS1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDSSD2005 -25V 0.25 -2.3AD1 D1P-Channel MOSFETAbsolute Maxim

8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2002 BVdss Rds(on) IDN-Channel 25V 0.10 3.5AS1 D2 D2P-Channel -25V 0.25 -2.3A N

8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2008 BVdss Rds(on) IDN-Channel 30V 0.05 3.5AS1 D2 D2P-Channel -30V 0.10 -3.5A N

8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 D2 D2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1 G2 Product SummarySSD2006 BVdss Rds(on) IDN-Channel 30V 0.05 5.4AS1 S2P-Channel -30V 0.10 -3.8A N

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2003 25V 0.10 3.5AN -Channel MOSFETAbsolute Maximum

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D16S2 3 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2009 50V 0.13 3.0AN -Channel MOSFETAbsolute Maximum

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

Data Sheet4V Drive Nch MOSFET RSD200N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitchingPackaging specifications Inner circu

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE Please click here to visit our online spice models database.General Description NMSD200B01 is best suited for switching voltage regulator and power management applications. It 6improves efficiency and reliability of DC-DC controllers 5used in Voltage Regulator Modules (VRM) and can 4support c

NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE Please click here to visit our online spice models database.General Description NMSD200B01 is best suited for switching voltage regulator and power management applications. It 6improves efficiency and reliability of DC-DC controllers 5used in Voltage Regulator Modules (VRM) and can 4support c

Power Transistors2SD2000Silicon NPN triple diffusion planar typeFor power switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingSatisfactory linearity of foward current transfer ratio hFE 3.1 0.1Large collector power dissipation PCFull-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1Absolute Ma

NPN TRIPLE DIFFUSED2SD200 PLANAR SILICON TRANSISTORCOLOR TV HORIZONTAL OUTPUTAPPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD200DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1500V (Min.)(BR)CBOLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2001DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V(Min.)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits of color TVreceivers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc Silicon NPN Power Transistor 2SD2000DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOHigh Speed SwitchingGood Linearity of hFEHigh Collector Power DissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYM