SD200DC - описание и поиск аналогов

High-Speed Analog N-Channel Enhancement-Mode LLC DMOS FETS SD200 / SD201 / SD202 / SD203 / SSTSD201 / SSTSD203 FEATURES DESCRIPTION High gain . . . . . . . . . . . . . . . . . . . . . 8.0 dB min @ 1 GHz The SD200 series is manufactured utilizing Calogic s Low Noise. . . . . . . . . . . . . . . . . . . . . 5.0 dB max @ 1 GHz proprietary DMOS design and processing techniques

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2004 BVdss Rds(on) ID N-Channel 20V 0.125 3.0A S1 D2 D2 P-Channel -20V 0.20 -2.5A N

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times S1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID SSD2005 -25V 0.25 -2.3A D1 D1 P-Channel MOSFET Absolute Maxim

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2002 BVdss Rds(on) ID N-Channel 25V 0.10 3.5A S1 D2 D2 P-Channel -25V 0.25 -2.3A N

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 S2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2008 BVdss Rds(on) ID N-Channel 30V 0.05 3.5A S1 D2 D2 P-Channel -30V 0.10 -3.5A N

8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 D2 D2 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 G2 Product Summary SSD2006 BVdss Rds(on) ID N-Channel 30V 0.05 5.4A S1 S2 P-Channel -30V 0.10 -3.8A N

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2003 25V 0.10 3.5A N -Channel MOSFET Absolute Maximum

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 6 S2 3 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2009 50V 0.13 3.0A N -Channel MOSFET Absolute Maximum

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

Data Sheet 4V Drive Nch MOSFET RSD200N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Packaging specifications Inner circu

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE Please click here to visit our online spice models database. General Description NMSD200B01 is best suited for switching voltage regulator and power management applications. It 6 improves efficiency and reliability of DC-DC controllers 5 used in Voltage Regulator Modules (VRM) and can 4 support c

NMSD200B01 200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE Please click here to visit our online spice models database. General Description NMSD200B01 is best suited for switching voltage regulator and power management applications. It 6 improves efficiency and reliability of DC-DC controllers 5 used in Voltage Regulator Modules (VRM) and can 4 support c

Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching Satisfactory linearity of foward current transfer ratio hFE 3.1 0.1 Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 Absolute Ma

NPN TRIPLE DIFFUSED 2SD200 PLANAR SILICON TRANSISTOR COLOR TV HORIZONTAL OUTPUT APPLICATIONS(No Damper Diode) TO-3 High Collector-Base Voltage(VCBO=1500V) High Speed Switching ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 1500 V Collector-Emitter Voltage VCEO 800 V Emitter-Base voltage VEBO 6 V Collector C

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD200 DESCRIPTION High Collector-Base Breakdown Voltage- V = 1500V (Min.) (BR)CBO Low Collector Saturation Voltage- High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal output applications. ABSOLUTE MAXIMUM RATINGS(T =2

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2001 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min.) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc Silicon NPN Power Transistor 2SD2000 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO High Speed Switching Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM