SD212DE
MOSFET. Datasheet pdf. Equivalent
Type Designator: SD212DE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 10
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 40
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 0.05
A
Tjⓘ - Maximum Junction Temperature: 125
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 45
Ohm
Package:
TO-72
SD212DE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SD212DE
Datasheet (PDF)
..1. Size:29K calogic
sd210de sd212de sd214de.pdf 
High-Speed AnalogN-Channel DMOS FETsSD210 / SD212 / SD214FEATURES DESCRIPTION High Input to Output Isolation . . . . . . . . . . . . . . . . 120dB The Calogic SD210 is a 30V analog switch driver without a Low On Resistance . . . . . . . . . . . . . . . . . . . . . . . . 30 Ohm built-in protection diode from gate to substrate for use with Low Feedthrough and Feedba
9.3. Size:71K sanyo
2sd2120.pdf
Ordering number:EN3239NPN Epitaxial Planar Silicon Transistor2SD2120General Driver ApplicationsFeatures Package Dimensions Darlington connection (Contains bias resistance,unit:mmdamper diode).2064A High DC current gain.[2SD2120]2.5 Less dependence of DC current gain on temperature.1.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base
9.5. Size:31K hitachi
2sd2121.pdf
2SD2121(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1407(L)/(S)OutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L TypeAbsolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 5V
9.6. Size:34K hitachi
2sd2122 2sd2123.pdf
2SD2122(L)/(S), 2SD2123(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifier complementary pair with 2SB1409(L)/(S)OutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L Type2SD2122(L)/(S), 2SD2123(L)/(S)Absolute Maximum Ratings (Ta = 25C)RatingsItem Symbol 2SD2122(L)/(S) 2SD2123(L)/(S) UnitCollector to base voltage VC
9.7. Size:33K hitachi
2sd2124.pdf
2SD2124(L)/(S)Silicon NPN EpitaxialApplicationLow frequency power amplifierOutlineDPAK42, 44112ID1. Base3 2. Collector3. EmitterS Type 12 6 k 0.5 k4. Collector3(Typ) (Typ)L Type 32SD2124(L)/(S)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter
9.9. Size:980K kexin
2sd2121.pdf
SMD Type TransistorsNPN Transistors2SD2121TO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8 Features 0.50 -0.7 Low frequency power amplifier Complementary to 2SB14070.127+0.10.80-0.1max+ 0.11 Base2.3 0.60- 0.1+0.154 .60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
9.10. Size:202K inchange semiconductor
2sd2125.pdf
isc Silicon NPN Power Transistor 2SD2125DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
9.11. Size:197K inchange semiconductor
2sd2128.pdf
isc Silicon NPN Darlington Power Transistor 2SD2128DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.2V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for lo
9.12. Size:195K inchange semiconductor
2sd2129.pdf
isc Silicon NPN Darlington Power Transistor 2SD2129DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 2000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh power swi
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