All MOSFET. SD214 Datasheet

 

SD214 Datasheet and Replacement


   Type Designator: SD214
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 40 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 45 Ohm
   Package: TO-72
 

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SD214 Datasheet (PDF)

 ..1. Size:88K  njs
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SD214

 0.1. Size:48K  rohm
2sd2142.pdf pdf_icon

SD214

2SD2142K / 2SC2062STransistorsTransistors2SD2470(94L-570-D25)(SPEC-D230)316Appendix NotesNo technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD.The contents described herein are subject to change without notice. The specifications for theproduct described in this document are for ref

 0.2. Size:87K  rohm
2sd2212 2sd2143 2sd1866.pdf pdf_icon

SD214

2SD2212 / 2SD2143 / 2SD1866 Transistors Medium Power Transistor (Motor, Relay drive) (6010V, 2A) 2SD2212 / 2SD2143 / 2SD1866 External dimensions (Unit : mm) Features 1) Built-in zener diode between collector and base. 2SD22124.02) Strong protection against reverse surges due to "L" 1.0 2.5 0.5 loads. (1)(2)3) Built-in resistor between base and emitter. (3)4)

 0.3. Size:53K  rohm
2sd2144s.pdf pdf_icon

SD214

2SD2114K / 2SD2144STransistorsHigh-current Gain MediumPower Transistor (20V, 0.5A)2SD2114K / 2SD2144S External dimensions (Units : mm) Features2SD2114K1) High DC current gain.2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.)0.80.10.95 0.952) High emitter-base voltage.(1) (2)00.1 VEBO =12V (Min.)3) Low VCE (sat).(3) VCE (sat) = 0.18V (Typ.)+0.10.15

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - SD214 MOSFET datasheet

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