All MOSFET. IRFZ48N Datasheet

 

IRFZ48N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRFZ48N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 94 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 54 nC

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220AB

IRFZ48N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFZ48N Datasheet (PDF)

0.1. irfz48n 1.pdf Size:53K _philips

IRFZ48N
IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-s

0.2. irfz48ns.pdf Size:131K _international_rectifier

IRFZ48N
IRFZ48N

PD - 9.1408B IRFZ48NS IRFZ48NL Advanced Process Technology HEXFET® Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL) D 175°C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche Rated RDS(on) = 0.014Ω Description G Advanced HEXFET® Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S techniques to achie

 0.3. irfz48npbf.pdf Size:226K _international_rectifier

IRFZ48N
IRFZ48N

PD - 94991B IRFZ48NPbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching RDS(on) = 14mΩ G l Fully Avalanche Rated l Lead-Free ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extr

0.4. irfz48n.pdf Size:102K _international_rectifier

IRFZ48N
IRFZ48N

PD - 91406 IRFZ48N HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 14mΩ Fast Switching G Fully Avalanche Rated ID = 64A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance

 0.5. irfz48nlpbf.pdf Size:301K _international_rectifier

IRFZ48N
IRFZ48N

 IRFZ48NSPbF IRFZ48NLPbF l Advanced Process Technology l Surface Mount (IRFZ48NS) HEXFET® Power MOSFET l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature D VDSS = 55V l Fast Switching l Fully Avalanche Rated l Lead-Free RDS(on) = 0.014Ω Description G Advanced HEXFET Power MOSFETs from ID = 64A International Rectifier utilize advanced processing S

0.6. irfz48n 1.pdf Size:53K _international_rectifier

IRFZ48N
IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistor GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT standard level field-effect power transistor in a plastic envelope using VDS Drain-source voltage 55 V ’trench’ technology. The device ID Drain current (DC) 64 A features very low on-s

Datasheet: IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , BS170 , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS .

 

 
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