Справочник MOSFET. IRFZ48N

 

IRFZ48N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IRFZ48N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 94 W

Предельно допустимое напряжение сток-исток |Uds|: 55 V

Предельно допустимое напряжение затвор-исток |Ugs|: 10 V

Максимально допустимый постоянный ток стока |Id|: 53 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 54 nC

Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm

Тип корпуса: TO220AB

Аналог (замена) для IRFZ48N

 

 

IRFZ48N Datasheet (PDF)

..1. irfz48n.pdf Size:102K _international_rectifier

IRFZ48N IRFZ48N

PD - 91406IRFZ48NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 14m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance

..2. irfz48n 1.pdf Size:53K _international_rectifier

IRFZ48N IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s

..3. irfz48n 1.pdf Size:53K _philips

IRFZ48N IRFZ48N

Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s

..4. irfz48n.pdf Size:144K _inchange_semiconductor

IRFZ48N IRFZ48N

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES Drain Current ID= 64A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.014(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI

0.1. irfz48ns irfz48nl.pdf Size:131K _international_rectifier

IRFZ48N IRFZ48N

PD - 9.1408BIRFZ48NSIRFZ48NL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL)D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingStechniques to achie

0.2. irfz48npbf.pdf Size:226K _international_rectifier

IRFZ48N IRFZ48N

PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 

 0.3. irfz48nlpbf.pdf Size:301K _international_rectifier

IRFZ48N IRFZ48N

IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS

0.4. irfz48npbf.pdf Size:226K _infineon

IRFZ48N IRFZ48N

PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr

 0.5. irfz48nspbf irfz48nlpbf.pdf Size:301K _infineon

IRFZ48N IRFZ48N

IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS

0.6. auirfz48n.pdf Size:220K _infineon

IRFZ48N IRFZ48N

PD - 97732AUTOMOTIVE GRADEAUIRFZ48NHEXFET Power MOSFETFeaturesl Advanced Planar TechnologyDV(BR)DSS55Vl Low On-ResistanceRDS(on) typ.11ml Dynamic dv/dt RatingGl 175C Operating Temperaturemax 14ml Fast SwitchingSID69Al Fully Avalanche Ratedl Repetitive Avalanche Allowedup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDesc

0.7. irfz48np.pdf Size:1790K _cn_vbsemi

IRFZ48N IRFZ48N

IRFZ48NPwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Dire

0.8. irfz48ns.pdf Size:251K _inchange_semiconductor

IRFZ48N IRFZ48N

isc N-Channel MOSFET Transistor IRFZ48NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

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