IRFZ48N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: IRFZ48N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 94 W
Предельно допустимое напряжение сток-исток |Uds|: 55 V
Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
Максимально допустимый постоянный ток стока |Id|: 53 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 54 nC
Сопротивление сток-исток открытого транзистора (Rds): 0.016 Ohm
Тип корпуса: TO220AB
IRFZ48N Datasheet (PDF)
0.1. irfz48n 1.pdf 
Size:53K _philips
Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s
0.2. irfz48ns.pdf Size:131K _international_rectifier
PD - 9.1408BIRFZ48NSIRFZ48NL Advanced Process TechnologyHEXFET Power MOSFET Surface Mount (IRFZ48NS) Low-profile through-hole (IRFZ48NL)D 175C Operating Temperature VDSS = 55V Fast Switching Fully Avalanche RatedRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingStechniques to achie
0.3. irfz48npbf.pdf Size:226K _international_rectifier
PD - 94991BIRFZ48NPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDVDSS = 55Vl Dynamic dv/dt Ratingl 175C Operating Temperaturel Fast SwitchingRDS(on) = 14mGl Fully Avalanche Ratedl Lead-FreeID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextr
0.4. irfz48n.pdf Size:102K _international_rectifier
PD - 91406IRFZ48NHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 55V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 14m Fast SwitchingG Fully Avalanche RatedID = 64ASDescriptionAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance
0.5. irfz48nlpbf.pdf Size:301K _international_rectifier
IRFZ48NSPbFIRFZ48NLPbFl Advanced Process Technologyl Surface Mount (IRFZ48NS)HEXFET Power MOSFETl Low-profile through-hole (IRFZ48NL)l 175C Operating Temperature DVDSS = 55Vl Fast Switchingl Fully Avalanche Ratedl Lead-FreeRDS(on) = 0.014DescriptionGAdvanced HEXFET Power MOSFETs fromID = 64AInternational Rectifier utilize advanced processingS
0.6. irfz48n 1.pdf Size:53K _international_rectifier
Philips Semiconductors Product specification N-channel enhancement mode IRFZ48N TrenchMOSTM transistorGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope using VDS Drain-source voltage 55 Vtrench technology. The device ID Drain current (DC) 64 Afeatures very low on-s
0.7. irfz48ns.pdf Size:251K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFZ48NSFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS
0.8. irfz48n.pdf Size:144K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFZ48N FEATURES Drain Current ID= 64A@ TC=25 Drain Source Voltage- : VDSS= 55V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.014(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI
Другие MOSFET... IRFZ44ES , IRFZ44N , IRFZ44NL , IRFZ44NS , IRFZ45 , IRFZ46N , IRFZ46NL , IRFZ46NS , BS170 , IRFZ48NL , IRFZ48NS , IRL1004 , IRL1004L , IRL1004S , IRL2203N , IRL2203NL , IRL2203NS .
