All MOSFET. SDF9N100 Datasheet

 

SDF9N100 MOSFET. Datasheet pdf. Equivalent

Type Designator: SDF9N100

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 145 nC

Rise Time (tr): 110 nS

Drain-Source Capacitance (Cd): 550 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO-220

SDF9N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SDF9N100 Datasheet (PDF)

1.1. sdf9n100.pdf Size:162K _upd-mosfet

SDF9N100



1.2. sdf9n100.pdf Size:162K _solitron

SDF9N100



 5.1. sdf9na80.pdf Size:161K _solitron

SDF9N100



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