All MOSFET. SDP10N60 Datasheet

 

SDP10N60 Datasheet and Replacement


   Type Designator: SDP10N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 162 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO-220
 

 SDP10N60 substitution

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SDP10N60 Datasheet (PDF)

 ..1. Size:453K  samhop
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SDP10N60

SDP10N60SDF10N60aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M

Datasheet: SDF1NA60 , SDF340 , SDF450 , SDF460 , SDF4N90 , SDF75NA20 , SDF9130 , SDF9N100 , 5N65 , SEF401002 , SEF40604 , SEFM150 , SEFM250 , SEFM350 , SEFM460 , SEFN450 , SEFN9140 .

History: IRF6708S2 | ME15N25F

Keywords - SDP10N60 MOSFET datasheet

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