SDP10N60 PDF and Equivalents Search

 

SDP10N60 Specs and Replacement

Type Designator: SDP10N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 162 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 165 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO-220

SDP10N60 substitution

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SDP10N60 datasheet

 ..1. Size:453K  samhop
 sdf10n60 sdp10n60 sdp10n60.pdf pdf_icon

SDP10N60

SDP10N60 SDF10N60 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M... See More ⇒

Detailed specifications: SDF1NA60, SDF340, SDF450, SDF460, SDF4N90, SDF75NA20, SDF9130, SDF9N100, 2SK3568, SEF401002, SEF40604, SEFM150, SEFM250, SEFM350, SEFM460, SEFN450, SEFN9140

Keywords - SDP10N60 MOSFET specs

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