All MOSFET. SES760 Datasheet

 

SES760 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SES760
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 140 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 140 nC
   trⓘ - Rise Time: 86 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO-257

 SES760 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SES760 Datasheet (PDF)

 ..1. Size:41K  semitronics
 ses760.pdf

SES760 SES760

SEMITRONICS CORP. SES760 64 Commercial Street, Freeport, N.Y. 11520 SMPS MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Improved Gate, Avalanche and dynamic dv.dt Ruggedness Ease of Paralleling MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE OU

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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