SES760 Datasheet and Replacement
Type Designator: SES760
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 86 nS
Cossⓘ - Output Capacitance: 208 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO-257
SES760 substitution
SES760 Datasheet (PDF)
ses760.pdf

SEMITRONICS CORP. SES760 64 Commercial Street, Freeport, N.Y. 11520 SMPS MOSFET Phone: (516) 623-9400 Fax. (516) 623-6954 FEATURES PACKAGE Isolated Case Hermetically Sealed Package Improved Gate, Avalanche and dynamic dv.dt Ruggedness Ease of Paralleling MIL STX Screening Available APPLICATIONS High Reliability Power Supplies CASE OU
Datasheet: SEFM460 , SEFN450 , SEFN9140 , SEFY140C , SEFY340CSTX , SEFY9130C , SES744 , SES759 , AO3401 , SES779 , SF1116 , SFF044J , SFF054 , SFF054C , SH8J62 , SH8J65 , SH8K11 .
History: BL30N50-F | SM7A22NSUB | IRFSZ30 | STD95N4F3 | 2SK1937 | FQD17P06TF | 2SJ602
Keywords - SES760 MOSFET datasheet
SES760 cross reference
SES760 equivalent finder
SES760 lookup
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History: BL30N50-F | SM7A22NSUB | IRFSZ30 | STD95N4F3 | 2SK1937 | FQD17P06TF | 2SJ602



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