SHD226314 MOSFET. Datasheet pdf. Equivalent
Type Designator: SHD226314
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 110 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 35 nC
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 660 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO-257
SHD226314 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SHD226314 Datasheet (PDF)
shd226314.pdf
SENSITRON SHD226314SEMICONDUCTORTECHNICAL DATADATA SHEET 816, REV. -HERMETIC POWER MOSFETN-CHANNEL, LOGIC LEVEL 60 VOLT, 0.05 OHM, 30A MOSFET Fast Switching Low RDS (on) Logic Level Gate DriverMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 20* Amps
shd226313.pdf
SENSITRON SHD226313SEMICONDUCTORTECHNICAL DATADATA SHEET 817, REV -HERMETIC POWER MOSFETP-CHANNELFEATURES: -60 Volt, 0.4 Ohm, -18 A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on)MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID (on) -
shd226303.pdf
SENSITRON SHD226303SEMICONDUCTORTECHNICAL DATADATA SHEET 622, REV. -HERMETIC POWER MOSFETN-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRFY230MMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 9.0 AmpsCONTINUOUS DR
shd226305 shd226305b.pdf
SHD226305SENSITRON SHD226305BSEMICONDUCTORTECHNICAL DATADATA SHEET 336, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES: 500 Volt, 1.6 Ohm MOSFET Isolated and Hermetically Sealed Equivalent to IRFY430MMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 3.7 A
shd226302.pdf
SENSITRON SHD226302 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .19 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY130M MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL M
shd226309.pdf
SHD226309 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: 100 Volt, 0.31 Ohm, -9.3 A MOSFET Fast Switching Low RDS (on) Equivalent to IRFY9130 Series Add a C to the part number for ceramic seals, SHDC226309 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATIN
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: PHB3N60E | PHD37N06LT
History: PHB3N60E | PHD37N06LT
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918