SHD226314 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SHD226314
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 110 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 170 ns
Cossⓘ - Выходная емкость: 660 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
Тип корпуса: TO-257
SHD226314 Datasheet (PDF)
shd226314.pdf
SENSITRON SHD226314SEMICONDUCTORTECHNICAL DATADATA SHEET 816, REV. -HERMETIC POWER MOSFETN-CHANNEL, LOGIC LEVEL 60 VOLT, 0.05 OHM, 30A MOSFET Fast Switching Low RDS (on) Logic Level Gate DriverMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 20* Amps
shd226313.pdf
SENSITRON SHD226313SEMICONDUCTORTECHNICAL DATADATA SHEET 817, REV -HERMETIC POWER MOSFETP-CHANNELFEATURES: -60 Volt, 0.4 Ohm, -18 A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on)MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID (on) -
shd226303.pdf
SENSITRON SHD226303SEMICONDUCTORTECHNICAL DATADATA SHEET 622, REV. -HERMETIC POWER MOSFETN-CHANNEL 200 VOLT, 0.4 OHM, 9.0A MOSFET Fast Switching Low RDS (on) Equivalent to IRFY230MMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 9.0 AmpsCONTINUOUS DR
shd226305 shd226305b.pdf
SHD226305SENSITRON SHD226305BSEMICONDUCTORTECHNICAL DATADATA SHEET 336, REV. AHERMETIC POWER MOSFETN-CHANNELFEATURES: 500 Volt, 1.6 Ohm MOSFET Isolated and Hermetically Sealed Equivalent to IRFY430MMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGATE TO SOURCE VOLTAGE VGS - - 20VoltsID - - 3.7 A
shd226302.pdf
SENSITRON SHD226302 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 222, REV. B Formerly Part Number SHD22632 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, .19 Ohm, 11A MOSFET Isolated Hermetic Metal Package Fast Switching Low RDS (on) Equivalent to IRFY130M MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL M
shd226309.pdf
SHD226309 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 619, REV - HERMETIC POWER MOSFET P-CHANNEL FEATURES: 100 Volt, 0.31 Ohm, -9.3 A MOSFET Fast Switching Low RDS (on) Equivalent to IRFY9130 Series Add a C to the part number for ceramic seals, SHDC226309 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. RATIN
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918