IRF7380PBF-1 MOSFET Datasheet: N-Ch, 80V, 3.6A. Full specification with pinout and replacement list

IRF7380PBF-1 Specs and Replacement

Type Designator: IRF7380PBF-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 110 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.073 Ohm

Package: SO-8

IRF7380PBF-1 substitution

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IRF7380PBF-1 datasheet

..1. Size:205K international rectifier
irf7380pbf-1.pdf pdf_icon

IRF7380TRPbF-1 HEXFET Power MOSFET VDS 80 V 1 8 S1 D1 RDS(on) max 2 7 73 m G1 D1 (@V = 10V) GS 3 6 S2 D2 Qg (typical) 15 nC 4 5 ID G2 D2 3.6 A (@T = 25 C) A Top View SO-8 Applications l High frequency DC-DC converters Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Ma... See More ⇒

4.1. Size:226K international rectifier
irf7380pbf.pdf pdf_icon

IRF7380PbF HEXFET Power MOSFET VDSS RDS(on) max ID Applications l High frequency DC-DC converters 80V 73m @VGS = 10V 3.6A l Lead-Free Benefits 1 8 S1 D1 l Low Gate to Drain Charge to Reduce 2 7 G1 D1 Switching Losses 3 6 l Fully Characterized Capacitance Including S2 D2 Effective COSS to Simplify Design, (See 4 5 G2 D2 App. Note AN1001) l Fully Characterized Avalanche Vol... See More ⇒

7.1. Size:200K international rectifier
irf7380qpbf.pdf pdf_icon

PD - 96132B IRF7380QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance VDSS RDS(on) max ID l N Channel MOSFET 73m @VGS = 10V l Surface Mount 80V 2.2A l Available in Tape & Reel l 150 C Operating Temperature l Lead-Free 1 8 S1 D1 2 7 Description G1 D1 Additional features of These HEXFET Power 3 6 S2 D2 MOSFET's are a 150 C junction operating 4... See More ⇒

8.1. Size:259K international rectifier
irf7389pbf.pdf pdf_icon

PD - 95462 IRF7389PbF HEXFET Power MOSFET l Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 l Ultra Low On-Resistance S1 D1 l Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V l Surface Mount 3 6 S2 D2 l Fully Avalanche Rated 4 5 G2 D2 l Lead-Free P-CHANNEL MOSFET RDS(on) 0.029 0.058 Top View Description Fifth Generation HEXFETs from International Rectifier... See More ⇒