All MOSFET. SIA415DJ Datasheet

 

SIA415DJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIA415DJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 8.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 31 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SC-70-6L

 SIA415DJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIA415DJ Datasheet (PDF)

 ..1. Size:188K  vishay
 sia415dj.pdf

SIA415DJ SIA415DJ

New ProductSiA415DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ) TrenchFET Power MOSFET0.035 at VGS = - 4.5 V - 12a- 20 15 nC New Thermally Enhanced PowerPAK RoHS0.051 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- Small Footprint Area- Low On-ResistanceAPPLICATIONSPowerPAK

 9.1. Size:211K  vishay
 sia413dj.pdf

SIA415DJ SIA415DJ

SiA413DJVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) New Thermally Enhanced PowerPAKSC-70 Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material categorization:0.1

 9.2. Size:193K  vishay
 sia418dj.pdf

SIA415DJ SIA415DJ

SiA418DJVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.)ID (A)a Qg (Typ.) 100 % Rg Tested0.018 at VGS = 10 V Material categorization:1230 5 nCFor definitions of compliance please see0.022 at VGS = 4.5 V 12www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS DC/DC

 9.3. Size:203K  vishay
 sia414dj.pdf

SIA415DJ SIA415DJ

SiA414DJVishay SiliconixN-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET New Thermally Enhanced PowerPAKVDS (V) RDS(on) ()ID (A)a Qg (Typ.)SC-70 Package0.011 at VGS = 4.5 V 12- Small Footprint Area Material categorization:0.013 at VGS = 2.5 V 12For definitions of compliance please see0.016 at VGS = 1.8 V 8 12 19 nC

 9.4. Size:93K  vishay
 sia417dj.pdf

SIA415DJ SIA415DJ

New ProductSiA417DJVishay SiliconixP-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.023 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.031 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package0.040 at VGS = - 1.8 V - 8 - Small Footprint Area- 12a 19 nC- Low On-Res

 9.5. Size:215K  vishay
 sia413adj.pdf

SIA415DJ SIA415DJ

New ProductSiA413ADJVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70Package0.029 at VGS = - 4.5 V - 12a- Small Footprint Area0.034 at VGS = - 2.5 V - 12a- Low On-Resistance- 12 23 nC0.044 at VGS = - 1.8 V - 12a Material cat

 9.6. Size:189K  vishay
 sia411dj.pdf

SIA415DJ SIA415DJ

New ProductSiA411DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.030 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK RoHS0.041 at VGS = - 2.5 V - 12a COMPLIANTSC-70 Package- 20 15 nC0.056 at VGS = - 1.8 V - Small Footprint Area- 12a- Low On-

 9.7. Size:210K  vishay
 sia416dj.pdf

SIA415DJ SIA415DJ

SiA416DJVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested Material categorization:0.083 at VGS = 10 V 11.3100 3.5 nCFor definitions of compliance please see0.130 at VGS = 4.5 V 9www.vishay.com/doc?99912PowerPAK SC-70-6L-SingleAPPLICATIONS

 9.8. Size:92K  vishay
 sia419dj.pdf

SIA415DJ SIA415DJ

SiA419DJVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.030 at VGS = - 4.5 V - 12a TrenchFET Power MOSFET0.039 at VGS = - 2.5 V - 12a New Thermally Enhanced PowerPAKSC-70 Package- 20 0.051 at VGS = - 1.8 V - 12a 17.5 nC- Small Footprint Area

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