SIA429DJT Datasheet. Specs and Replacement

Type Designator: SIA429DJT  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 10.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0205 Ohm

Package: SC-70-6L

SIA429DJT substitution

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SIA429DJT datasheet

 ..1. Size:200K  vishay
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SIA429DJT

New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK 0.027 at VGS = - 2.5 V - 12a SC-70 Package - 20 24.5 nC 0.036 at VGS = - 1.8 V - 12a - S... See More ⇒

 6.1. Size:154K  vishay
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SIA429DJT

New Product SiA429DJT Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.0205 at VGS = - 4.5 V - 12a New Thermally Enhanced PowerPAK 0.027 at VGS = - 2.5 V - 12a SC-70 Package - 20 24.5 nC 0.036 at VGS = - 1.8 V - 12a - S... See More ⇒

 9.1. Size:200K  vishay
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SIA429DJT

SiA421DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) New Thermally Enhanced PowerPAK SC-70 Package 0.035 at VGS = - 10 V - 12a - 30 10 nC - Small Footprint Area 0.056 at VGS = - 4.5 V - 12a - Low On-Resistance Material categorization For definitions of compliance please... See More ⇒

 9.2. Size:222K  vishay
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SIA429DJT

New Product SiA427ADJ Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.016 at VGS = - 4.5 V - 12a - Small Footprint Area 0.0215 at VGS = - 2.5 V - 12a - Low On-Resistance 100 % Rg Tested - 8 0.026 at VGS = - 1.8 V - 12a 30 nC ... See More ⇒

Detailed specifications: SIA417DJ, SIA418DJ, SIA419DJ, SIA421DJ, SIA425EDJ, SIA426DJ, SIA427ADJ, SIA427DJ, IRFP250, SIA430DJ, SIA430DJT, SIA431DJ, SIA432DJ, SIA433EDJ, SIA436DJ, SIA437DJ, SIA438EDJ

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