SIA527DJ Datasheet. Specs and Replacement
Type Designator: SIA527DJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 160 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SC-70-6
SIA527DJ substitution
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SIA527DJ datasheet
sia527dj.pdf
SiA527DJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK 0.029 at VGS = 4.5 V SC-70 Package 4.5a - Small Footprint Area 0.034 at VGS = 2.5 V 4.5a N-Channel 12 5.6 nC - Low On-Resistance 0.044 at VGS = 1.8 V 4.5a 100 % Rg Tested 0.0... See More ⇒
Detailed specifications: SIA456DJ, SIA459EDJ, SIA461DJ, SIA462DJ, SIA466EDJ, SIA483DJ, SIA485DJ, SIA519EDJ, AON7403, SIA533EDJ, SIA537EDJ, SIA810DJ, SIA811ADJ, SIA811DJ, SIA813DJ, SIA814DJ, SIA817EDJ
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