All MOSFET. SIA527DJ Datasheet

 

SIA527DJ Datasheet and Replacement


   Type Designator: SIA527DJ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SC-70-6
 

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SIA527DJ Datasheet (PDF)

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SIA527DJ

SiA527DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK 0.029 at VGS = 4.5 V SC-70 Package4.5a- Small Footprint Area0.034 at VGS = 2.5 V 4.5aN-Channel 12 5.6 nC- Low On-Resistance0.044 at VGS = 1.8 V 4.5a 100 % Rg Tested0.0

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History: PMT280ENEA | NVTFS5C453NL

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