SIA527DJ Datasheet and Replacement
Type Designator: SIA527DJ
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
Package: SC-70-6
SIA527DJ substitution
SIA527DJ Datasheet (PDF)
sia527dj.pdf
SiA527DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK 0.029 at VGS = 4.5 V SC-70 Package4.5a- Small Footprint Area0.034 at VGS = 2.5 V 4.5aN-Channel 12 5.6 nC- Low On-Resistance0.044 at VGS = 1.8 V 4.5a 100 % Rg Tested0.0
Datasheet: SIA456DJ , SIA459EDJ , SIA461DJ , SIA462DJ , SIA466EDJ , SIA483DJ , SIA485DJ , SIA519EDJ , AON7403 , SIA533EDJ , SIA537EDJ , SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ , SIA814DJ , SIA817EDJ .
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