All MOSFET. SIA527DJ Datasheet

 

SIA527DJ Datasheet and Replacement


   Type Designator: SIA527DJ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.029 Ohm
   Package: SC-70-6
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SIA527DJ Datasheet (PDF)

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SIA527DJ

SiA527DJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK 0.029 at VGS = 4.5 V SC-70 Package4.5a- Small Footprint Area0.034 at VGS = 2.5 V 4.5aN-Channel 12 5.6 nC- Low On-Resistance0.044 at VGS = 1.8 V 4.5a 100 % Rg Tested0.0

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SIA449DJ | SI4448DY | SI4804CDY | SI4200DY | 2SK2991 | SI4634DY | IRFY9130M

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