All MOSFET. SIA533EDJ Datasheet

 

SIA533EDJ Datasheet and Replacement


   Type Designator: SIA533EDJ
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: SC-70-6
 

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SIA533EDJ Datasheet (PDF)

 ..1. Size:273K  vishay
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SIA533EDJ

New ProductSiA533EDJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.034 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs0.040 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 1500 VN-Channel 12 5.6 nC0.050 at VGS = 1.8 V P-Channel 1000

 6.1. Size:272K  vishay
 sia533ed.pdf pdf_icon

SIA533EDJ

New ProductSiA533EDJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.034 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs0.040 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 1500 VN-Channel 12 5.6 nC0.050 at VGS = 1.8 V P-Channel 1000

 9.1. Size:392K  vishay
 sia537edj.pdf pdf_icon

SIA533EDJ

SiA537EDJwww.vishay.comVishay SiliconixN-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Typical ESD protection: N-channel 2400 V0.028 at VGS = 4.5 V 4.5 aP-channel 2000 VN-Channel 12 0.033 at VGS = 2.5 V 4.5 a 6.2 nC 100 % Rg tested0.042 at VGS = 1.8 V 4.5 a Ma

Datasheet: SIA459EDJ , SIA461DJ , SIA462DJ , SIA466EDJ , SIA483DJ , SIA485DJ , SIA519EDJ , SIA527DJ , K2611 , SIA537EDJ , SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ , SIA814DJ , SIA817EDJ , SIA850DJ .

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