SIA533EDJ Datasheet. Specs and Replacement
Type Designator: SIA533EDJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: SC-70-6
SIA533EDJ substitution
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SIA533EDJ datasheet
sia533edj.pdf
New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.034 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs 0.040 at VGS = 2.5 V 4.5a Typical ESD Protection N-Channel 1500 V N-Channel 12 5.6 nC 0.050 at VGS = 1.8 V P-Channel 1000... See More ⇒
sia533ed.pdf
New Product SiA533EDJ Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.034 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs 0.040 at VGS = 2.5 V 4.5a Typical ESD Protection N-Channel 1500 V N-Channel 12 5.6 nC 0.050 at VGS = 1.8 V P-Channel 1000... See More ⇒
sia537edj.pdf
SiA537EDJ www.vishay.com Vishay Siliconix N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Typical ESD protection N-channel 2400 V 0.028 at VGS = 4.5 V 4.5 a P-channel 2000 V N-Channel 12 0.033 at VGS = 2.5 V 4.5 a 6.2 nC 100 % Rg tested 0.042 at VGS = 1.8 V 4.5 a Ma... See More ⇒
Detailed specifications: SIA459EDJ, SIA461DJ, SIA462DJ, SIA466EDJ, SIA483DJ, SIA485DJ, SIA519EDJ, SIA527DJ, K2611, SIA537EDJ, SIA810DJ, SIA811ADJ, SIA811DJ, SIA813DJ, SIA814DJ, SIA817EDJ, SIA850DJ
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