SIA537EDJ Datasheet and Replacement
Type Designator: SIA537EDJ
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SC-70-6L
SIA537EDJ substitution
SIA537EDJ Datasheet (PDF)
sia537edj.pdf
SiA537EDJwww.vishay.comVishay SiliconixN-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETsVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Typical ESD protection: N-channel 2400 V0.028 at VGS = 4.5 V 4.5 aP-channel 2000 VN-Channel 12 0.033 at VGS = 2.5 V 4.5 a 6.2 nC 100 % Rg tested0.042 at VGS = 1.8 V 4.5 a Ma
sia533ed.pdf
New ProductSiA533EDJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.034 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs0.040 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 1500 VN-Channel 12 5.6 nC0.050 at VGS = 1.8 V P-Channel 1000
sia533edj.pdf
New ProductSiA533EDJVishay SiliconixN- and P-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.034 at VGS = 4.5 V 4.5a TrenchFET Power MOSFETs0.040 at VGS = 2.5 V 4.5a Typical ESD Protection: N-Channel 1500 VN-Channel 12 5.6 nC0.050 at VGS = 1.8 V P-Channel 1000
Datasheet: SIA461DJ , SIA462DJ , SIA466EDJ , SIA483DJ , SIA485DJ , SIA519EDJ , SIA527DJ , SIA533EDJ , 2SK3918 , SIA810DJ , SIA811ADJ , SIA811DJ , SIA813DJ , SIA814DJ , SIA817EDJ , SIA850DJ , SIA906EDJ .
History: UTT6NP10G-S08-R | CMUDM7004
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History: UTT6NP10G-S08-R | CMUDM7004
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