SIA814DJ
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIA814DJ
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 4.3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 45
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061
Ohm
Package:
SC-70-6
SIA814DJ
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIA814DJ
Datasheet (PDF)
..1. Size:241K vishay
sia814dj.pdf 
New ProductSiA814DJVishay SiliconixN-Channel 30-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.061 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS30 0.072 at VGS = 4.5 V 4.5 3.2 nCCOMPLIANTSC-70 Package0.110 at VGS = 2.5 V 4.5- Smal
9.1. Size:213K vishay
sia810dj.pdf
New ProductSiA810DJVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAKRoHS20 0.063 at VGS = 2.5 V 4.5 4.1 nCCOMPLIANTSC-70 Package0.077 at VGS = 1.8 V 4.5- Sma
9.2. Size:319K vishay
sia817edj.pdf
New ProductSiA817EDJVishay SiliconixP-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Schottky Power MOSFETQg Thermally Enhanced PowerPAKVDS (V) RDS(on) () Max. ID (A)(Typ.)SC-70 Package0.065 at VGS = - 10 V - 4.5a- Small Footprint Area0.080 at VGS = - 4.5 V - 4.5a- Low On-Resistance- 300.092 at VGS = - 3.7
9.3. Size:213K vishay
sia811dj.pdf
New ProductSiA811DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.094 at VGS = - 4.5 V - 4.5RoHS New Thermally Enhanced PowerPAKCOMPLIANT- 20 0.131 at VGS = - 2.5 V 4.9 nC- 4.5SC-70 Package0.185 at VGS = - 1.8 V - 4.5
9.4. Size:208K vishay
sia811.pdf
New ProductSiA811ADJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.116 at VGS = - 4.5 V - 4.5 New Thermally Enhanced PowerPAKRoHS- 20 0.155 at VGS = - 2.5 V 4.9 nC- 4.5COMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - 4.5
9.5. Size:309K vishay
sia813dj.pdf
New ProductSiA813DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg ID (A)aDefinition0.094 at VGS = - 4.5 V - 4.5 LITTLE FOOT Plus Schottky Power MOSFET- 20 0.131 at VGS = - 2.5 V - 4.5 4.9 nC New Thermally Enhanced PowerPAK0.185 at VGS = - 1.8 V -
9.6. Size:209K vishay
sia811adj.pdf
New ProductSiA811ADJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.116 at VGS = - 4.5 V - 4.5 New Thermally Enhanced PowerPAKRoHS- 20 0.155 at VGS = - 2.5 V 4.9 nC- 4.5COMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - 4.5
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