All MOSFET. SIA814DJ Datasheet

 

SIA814DJ MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIA814DJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 4.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: SC-70-6

 SIA814DJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIA814DJ Datasheet (PDF)

 ..1. Size:241K  vishay
 sia814dj.pdf

SIA814DJ SIA814DJ

New ProductSiA814DJVishay SiliconixN-Channel 30-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.061 at VGS = 10 V 4.5 New Thermally Enhanced PowerPAKRoHS30 0.072 at VGS = 4.5 V 4.5 3.2 nCCOMPLIANTSC-70 Package0.110 at VGS = 2.5 V 4.5- Smal

 9.1. Size:213K  vishay
 sia810dj.pdf

SIA814DJ SIA814DJ

New ProductSiA810DJVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.053 at VGS = 4.5 V 4.5 New Thermally Enhanced PowerPAKRoHS20 0.063 at VGS = 2.5 V 4.5 4.1 nCCOMPLIANTSC-70 Package0.077 at VGS = 1.8 V 4.5- Sma

 9.2. Size:319K  vishay
 sia817edj.pdf

SIA814DJ SIA814DJ

New ProductSiA817EDJVishay SiliconixP-Channel 30 V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY LITTLE FOOT Plus Schottky Power MOSFETQg Thermally Enhanced PowerPAKVDS (V) RDS(on) () Max. ID (A)(Typ.)SC-70 Package0.065 at VGS = - 10 V - 4.5a- Small Footprint Area0.080 at VGS = - 4.5 V - 4.5a- Low On-Resistance- 300.092 at VGS = - 3.7

 9.3. Size:213K  vishay
 sia811dj.pdf

SIA814DJ SIA814DJ

New ProductSiA811DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.094 at VGS = - 4.5 V - 4.5RoHS New Thermally Enhanced PowerPAKCOMPLIANT- 20 0.131 at VGS = - 2.5 V 4.9 nC- 4.5SC-70 Package0.185 at VGS = - 1.8 V - 4.5

 9.4. Size:208K  vishay
 sia811.pdf

SIA814DJ SIA814DJ

New ProductSiA811ADJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.116 at VGS = - 4.5 V - 4.5 New Thermally Enhanced PowerPAKRoHS- 20 0.155 at VGS = - 2.5 V 4.9 nC- 4.5COMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - 4.5

 9.5. Size:309K  vishay
 sia813dj.pdf

SIA814DJ SIA814DJ

New ProductSiA813DJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Qg ID (A)aDefinition0.094 at VGS = - 4.5 V - 4.5 LITTLE FOOT Plus Schottky Power MOSFET- 20 0.131 at VGS = - 2.5 V - 4.5 4.9 nC New Thermally Enhanced PowerPAK0.185 at VGS = - 1.8 V -

 9.6. Size:209K  vishay
 sia811adj.pdf

SIA814DJ SIA814DJ

New ProductSiA811ADJVishay SiliconixP-Channel 20-V (D-S) MOSFET with Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) () Qg ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.116 at VGS = - 4.5 V - 4.5 New Thermally Enhanced PowerPAKRoHS- 20 0.155 at VGS = - 2.5 V 4.9 nC- 4.5COMPLIANTSC-70 Package0.205 at VGS = - 1.8 V - 4.5

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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