All MOSFET. SIA906EDJ Datasheet

 

SIA906EDJ Datasheet and Replacement


   Type Designator: SIA906EDJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SC-70-6
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SIA906EDJ Datasheet (PDF)

 ..1. Size:226K  vishay
 sia906edj.pdf pdf_icon

SIA906EDJ

New ProductSiA906EDJVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK4.520 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 4.5- Small Footprint Area- Low On-Resistance Typic

 6.1. Size:225K  vishay
 sia906ed.pdf pdf_icon

SIA906EDJ

New ProductSiA906EDJVishay SiliconixDual N-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.046 at VGS = 4.5 V New Thermally Enhanced PowerPAK4.520 3.5 nCSC-70 Package0.063 at VGS = 2.5 V 4.5- Small Footprint Area- Low On-Resistance Typic

 9.1. Size:192K  vishay
 sia907edjt.pdf pdf_icon

SIA906EDJ

SiA907EDJTVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.057 at VGS = - 4.5 V - 4.5a- 20 4.9 nC New Thermally Enhanced Thin PowerPAK 0.095 at VGS = - 2.5 V - 4.5aSC-70 Package- Small Footprint Area- Low On-Res

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History: 2SK3017

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