IRL3202 Datasheet. Specs and Replacement

Type Designator: IRL3202  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 48 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO220

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IRL3202 datasheet

 ..1. Size:132K  international rectifier
 irl3202pbf.pdf pdf_icon

IRL3202

PD -95659 IRL3202PbF HEXFET Power MOSFET l Advanced Process Technology l Optimized for 4.5V-7.0V Gate Drive D l Ideal for CPU Core DC-DC Converters VDSS = 20V l Fast Switching l Lead-Free RDS(on) = 0.016 G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing ... See More ⇒

 ..2. Size:89K  international rectifier
 irl3202.pdf pdf_icon

IRL3202

PD 9.1695A IRL3202 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Optimized for 4.5V-7.0V Gate Drive VDSS = 20V Ideal for CPU Core DC-DC Converters Fast Switching RDS(on) = 0.016W G Description ID = 48A These HEXFET Power MOSFETs were designed S specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced processing techniq... See More ⇒

 0.1. Size:125K  international rectifier
 irl3202s.pdf pdf_icon

IRL3202

PD 9.1675B IRL3202S PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Surface Mount VDSS = 20V Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters RDS(on) = 0.016W Fast Switching G Description ID = 48A S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. Advanced pr... See More ⇒

 9.1. Size:126K  international rectifier
 irl3215.pdf pdf_icon

IRL3202

PD- 91792 IRL3215 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 150V Dynamic dv/dt Rating 175 C Operating Temperature RDS(on) = 0.166 Fast Switching G Fully Avalanche Rated ID = 12A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per... See More ⇒

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Detailed specifications: IRL3102, IRL3102S, IRL3103, IRL3103D1, IRL3103D1S, IRL3103D2, IRL3103L, IRL3103S, AON7408, IRL3202S, IRL3215, IRL3302, IRL3302S, IRL3303, IRL3303L, IRL3303S, IRL3402

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.