SIA929DJ Datasheet. Specs and Replacement
Type Designator: SIA929DJ 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
Qg ⓘ - Total Gate Charge: 14 nC
tr ⓘ - Rise Time: 18 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: SC-70-6
SIA929DJ substitution
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SIA929DJ datasheet
sia929dj.pdf
New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Gen III Power MOSFET 0.064 at VGS = - 10 V - 4.5a Thermally Enhanced PowerPAK 0.078 at VGS = - 4.5 V - 30 - 4.5a 6.6 nC SC-70 Package 0.120 at VGS = - 2.5 ... See More ⇒
sia922edj.pdf
SiA922EDJ www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package 0.064 at VGS = 4.5 V 4.5a - Small footprint area - Low on-resistance 0.072 at VGS = 3.0 V 4.5a 30 3.5 nC Typical ESD protection 1500 V (HBM) 0.080 at ... See More ⇒
sia923edj.pdf
SiA923EDJ Vishay Siliconix Dual P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.054 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK SC-70 0.070 at VGS = - 2.5 V - 4.5a Package - 20 9.5 nC 0.104 at VGS = - 1.8 V - 4.5a - Small Fo... See More ⇒
sia921ed.pdf
SiA921EDJ Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.059 at VGS = - 4.5 V - 4.5a - 20 4.9 nC New Thermally Enhanced PowerPAK SC-70 0.098 at VGS = - 2.5 V - 4.5a Package - Small Footprint Area - Low On-Resistance... See More ⇒
Detailed specifications: SIA911ADJ, SIA913ADJ, SIA914ADJ, SIA915DJ, SIA920DJ, SIA921EDJ, SIA922EDJ, SIA923EDJ, IRF640, SIA931DJ, SIA975DJ, SIB404DK, SIB406EDK, SIB408DK, SIB410DK, SIB411DK, SIB412DK
Keywords - SIA929DJ MOSFET specs
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