Справочник MOSFET. SIA929DJ

 

SIA929DJ MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SIA929DJ
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.9 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
   Пороговое напряжение включения |Ugs(th)|: 1.1 V
   Максимально допустимый постоянный ток стока |Id|: 4.3 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 14 nC
   Время нарастания (tr): 18 ns
   Сопротивление сток-исток открытого транзистора (Rds): 0.064 Ohm
   Тип корпуса: SC-70-6

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SIA929DJ Datasheet (PDF)

 ..1. Size:228K  vishay
 sia929dj.pdf

SIA929DJ SIA929DJ

New ProductSiA929DJVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Gen III Power MOSFET0.064 at VGS = - 10 V - 4.5a Thermally Enhanced PowerPAK0.078 at VGS = - 4.5 V - 30- 4.5a 6.6 nCSC-70 Package0.120 at VGS = - 2.5

 9.1. Size:277K  vishay
 sia922edj.pdf

SIA929DJ SIA929DJ

SiA922EDJwww.vishay.comVishay SiliconixDual N-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally enhanced PowerPAK SC-70 package0.064 at VGS = 4.5 V 4.5a- Small footprint area- Low on-resistance0.072 at VGS = 3.0 V 4.5a30 3.5 nC Typical ESD protection: 1500 V (HBM)0.080 at

 9.2. Size:209K  vishay
 sia923edj.pdf

SIA929DJ SIA929DJ

SiA923EDJVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.054 at VGS = - 4.5 V - 4.5a New Thermally Enhanced PowerPAK SC-70 0.070 at VGS = - 2.5 V - 4.5aPackage- 20 9.5 nC0.104 at VGS = - 1.8 V - 4.5a - Small Fo

 9.3. Size:212K  vishay
 sia921ed.pdf

SIA929DJ SIA929DJ

SiA921EDJVishay SiliconixDual P-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.059 at VGS = - 4.5 V - 4.5a- 20 4.9 nC New Thermally Enhanced PowerPAK SC-70 0.098 at VGS = - 2.5 V - 4.5aPackage- Small Footprint Area- Low On-Resistance

 9.4. Size:223K  vishay
 sia920dj.pdf

SIA929DJ SIA929DJ

New ProductSiA920DJVishay SiliconixDual N-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.027 at VGS = 4.5 V 4.5 Thermally Enhanced PowerPAK0.031 at VGS = 2.5 V 4.5SC-70 Package8 0.036 at Vgs = 1.8 V 4.5 4.8 nC- Small Footprint Area0.

 9.5. Size:187K  vishay
 sia921edj.pdf

SIA929DJ SIA929DJ

SiA921EDJVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 0.059 at VGS = - 4.5 V Package- 4.5a- 20 4.9 nC- Small Footprint Area0.098 at VGS = - 2.5 V - 4.5a- Low On-Resistance Typical ESD Protection: 1700 VPowerPAK SC-70-6 Dual

 9.6. Size:353K  vishay
 sia923aedj.pdf

SIA929DJ SIA929DJ

SiA923AEDJwww.vishay.comVishay SiliconixDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A) Qg (TYP.) Thermally Enhanced PowerPAK SC-70 Package0.054 at VGS = -4.5 V -4.5 a- Small Footprint Area0.070 at VGS = -2.5 V -4.5 a- Low On-Resistance-20 9.5 nC0.104 at VGS = -1.8 V -4.5 a Typical ESD Prot

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