SIA931DJ Datasheet. Specs and Replacement

Type Designator: SIA931DJ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SC-70-6

SIA931DJ substitution

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SIA931DJ datasheet

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SIA931DJ

SiA931DJ Vishay Siliconix Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen III Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAK SC-70 Package 0.065 at VGS = - 10 V - 4.5a - Small Footprint Area 0.080 at VGS = - 6 V - 30 - 4.5a 4.1 nC - Low On-Resistance 0.100 at VGS = - 4.5 V - 4.5a 100 % Rg Test... See More ⇒

Detailed specifications: SIA913ADJ, SIA914ADJ, SIA915DJ, SIA920DJ, SIA921EDJ, SIA922EDJ, SIA923EDJ, SIA929DJ, IRF1404, SIA975DJ, SIB404DK, SIB406EDK, SIB408DK, SIB410DK, SIB411DK, SIB412DK, SIB413DK

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.