All MOSFET. SIA931DJ Datasheet

 

SIA931DJ Datasheet and Replacement


   Type Designator: SIA931DJ
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SC-70-6
 

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SIA931DJ Datasheet (PDF)

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SIA931DJ

SiA931DJVishay SiliconixDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Gen III Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Thermally Enhanced PowerPAKSC-70 Package0.065 at VGS = - 10 V - 4.5a- Small Footprint Area0.080 at VGS = - 6 V - 30- 4.5a 4.1 nC- Low On-Resistance0.100 at VGS = - 4.5 V - 4.5a 100 % Rg Test

Datasheet: SIA913ADJ , SIA914ADJ , SIA915DJ , SIA920DJ , SIA921EDJ , SIA922EDJ , SIA923EDJ , SIA929DJ , IRF1404 , SIA975DJ , SIB404DK , SIB406EDK , SIB408DK , SIB410DK , SIB411DK , SIB412DK , SIB413DK .

History: 25N10G-TM3-T | APT4080BN | NTHS5445T1

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