SIB414DK
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIB414DK
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 8
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 5
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 7.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9.35
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 280
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026
Ohm
Package: SC-75-6L
SIB414DK
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIB414DK
Datasheet (PDF)
..1. Size:224K vishay
sib414dk.pdf 
New ProductSiB414DKVishay SiliconixN-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.026 at VGS = 4.5 V 9a New Thermally Enhanced PowerPAKRoHS0.030 at VGS = 2.5 V COMPLIANT9aSC-75 Package- Small Footprint Area0.037 at VGS = 1.8 V 89a 8.6 nC- Low On-Resistance0.
9.1. Size:223K vishay
sib412dk.pdf
New ProductSiB412DKVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.034 at VGS = 4.5 V 9a New Thermally Enhanced PowerPAKRoHS0.040 at VGS = 2.5 V 209a 6.14 nCCOMPLIANTSC-75 Package0.054 at VGS = 1.8 V - Small Footprint Area9a- Low On-ResistanceA
9.2. Size:223K vishay
sib413dk.pdf
New ProductSiB413DKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, f Qg (Typ.) TrenchFET Power MOSFET0.075 at VGS = - 4.5 V - 9 New Thermally Enhanced PowerPAK RoHS- 20 4.56 nC0.143 at VGS = - 2.5 V - 7.8 COMPLIANTSC-75 Package- Small Footprint AreaAPPLICATIONS Load Switch, PA Switc
9.3. Size:218K vishay
sib417aedk.pdf
SiB417AEDKVishay SiliconixP-Channel 1.2 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max.ID (A)g Qg (Typ.) Thermally Enhanced PowerPAK0.032 at VGS = - 4.5 V - 9a SC-75 Package0.045 at VGS = - 2.5 V - Small Footprint Area- 9a- Low On-Resistance- 8 0.063 at VGS = - 1.8 V - 9a 11.3 nC 100 % Rg Tested0.120 at VG
9.4. Size:209K vishay
sib417edk.pdf
SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are
9.5. Size:188K vishay
sib410dk.pdf
New ProductSiB410DKVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.042 at VGS = 4.5 V TrenchFET Power MOSFET9 100 % Rg Tested0.046 at VGS = 2.5 V 30 9 5.7 nC Compliant to RoHS Directive 2002/95/EC0.052 at VGS = 1.8 V 9APPLICATIONSP
9.6. Size:227K vishay
sib417dk.pdf
New ProductSiB417DKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.052 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAKRoHS0.070 at VGS = - 2.5 V COMPLIANT- 9aSC-75 Package- Small Footprint Area- 8 0.093 at VGS = - 1.8 V - 4.07.78 nC- Low On-
9.7. Size:207K vishay
sib417ed.pdf
SiB417EDKVishay SiliconixP-Channel 1.2-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAKSC-75 Package- 8 0.100 at VGS = - 1.8 V - 4.07.3 nC- Small Footprint Are
9.8. Size:209K vishay
sib411dk.pdf
SiB411DKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.066 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS0.094 at VGS = - 2.5 V - 20- 9a 6 nC COMPLIANTSC-75 Package0.130 at VGS = - 1.8 V - Small Footprint Area- 9a- Low On-ResistanceAPPLI
9.9. Size:223K vishay
sib415dk.pdf
New ProductSiB415DKVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a, f Qg (Typ.) TrenchFET Power MOSFET0.087 at VGS = - 10 V - 9 New Thermally Enhanced PowerPAK RoHS- 30 3.5 nC0.158 at VGS = - 4.5 V - 7.2 COMPLIANTSC-75 Package- Small Footprint AreaAPPLICATIONSPowerPAK SC-75-6L-Single
9.10. Size:192K vishay
sib419dk.pdf
New ProductSiB419DKVishay SiliconixP-Channel 12-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)f, g Qg (Typ.) TrenchFET Power MOSFET0.060 at VGS = - 4.5 V - 9 New Thermally Enhanced PowerPAK RoHS0.082 at VGS = - 2.5 V - 9 7.15 nC- 12 COMPLIANTSC-75 Package0.114 at VGS = - 1.8 V - 2 - Small Footprint AreaAPPLICATIONS
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