SIB417DK Datasheet. Specs and Replacement

Type Designator: SIB417DK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 8 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 5 V

|Id| ⓘ - Maximum Drain Current: 5.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 217 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: SC-75-6L

SIB417DK substitution

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SIB417DK datasheet

 ..1. Size:227K  vishay
 sib417dk.pdf pdf_icon

SIB417DK

New Product SiB417DK Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.052 at VGS = - 4.5 V - 9a New Thermally Enhanced PowerPAK RoHS 0.070 at VGS = - 2.5 V COMPLIANT - 9a SC-75 Package - Small Footprint Area - 8 0.093 at VGS = - 1.8 V - 4.0 7.78 nC - Low On-... See More ⇒

 8.1. Size:218K  vishay
 sib417aedk.pdf pdf_icon

SIB417DK

SiB417AEDK Vishay Siliconix P-Channel 1.2 V (G-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)g Qg (Typ.) Thermally Enhanced PowerPAK 0.032 at VGS = - 4.5 V - 9a SC-75 Package 0.045 at VGS = - 2.5 V - Small Footprint Area - 9a - Low On-Resistance - 8 0.063 at VGS = - 1.8 V - 9a 11.3 nC 100 % Rg Tested 0.120 at VG... See More ⇒

 8.2. Size:209K  vishay
 sib417edk.pdf pdf_icon

SIB417DK

SiB417EDK Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAK SC-75 Package - 8 0.100 at VGS = - 1.8 V - 4.0 7.3 nC - Small Footprint Are... See More ⇒

 8.3. Size:207K  vishay
 sib417ed.pdf pdf_icon

SIB417DK

SiB417EDK Vishay Siliconix P-Channel 1.2-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.058 at VGS = - 4.5 V - 9.0a TrenchFET Power MOSFET 0.080 at VGS = - 2.5 V - 9.0a New Thermally Enhanced PowerPAK SC-75 Package - 8 0.100 at VGS = - 1.8 V - 4.0 7.3 nC - Small Footprint Are... See More ⇒

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Detailed specifications: SIB408DK, SIB410DK, SIB411DK, SIB412DK, SIB413DK, SIB414DK, SIB415DK, SIB417AEDK, P55NF06, SIB417EDK, SIB419DK, SIB422EDK, SIB433EDK, SIB437EDKT, SIB441EDK, SIB452DK, SIB455EDK

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