SIB456DK Datasheet. Specs and Replacement

Type Designator: SIB456DK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.185 Ohm

Package: SC-75-6L

SIB456DK substitution

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SIB456DK datasheet

 ..1. Size:218K  vishay
 sib456dk.pdf pdf_icon

SIB456DK

New Product SiB456DK www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATRUES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAK SC-75 0.185 at VGS = 10 V 6.3 Package 100 1.8 nC 0.310 at VGS = 4.5 V 4.9 - Small Footprint Area - Low On-Resistance 100 % Rg and UIS Tested PowerPAK SC-75-... See More ⇒

 9.1. Size:229K  vishay
 sib457ed.pdf pdf_icon

SIB456DK

New Product SiB457EDK Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 9a TrenchFET Power MOSFET 0.049 at VGS = - 2.5 V New Thermally Enhanced PowerPAK - 9a - 20 13 nC SC-75 Package 0.072 at VGS = - 1.8 V - 9a - Small F... See More ⇒

 9.2. Size:224K  vishay
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SIB456DK

New Product SiB452DK Vishay Siliconix N-Channel 190-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) TrenchFET Power MOSFET 2.4 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK RoHS 2.6 at VGS = 2.5 V 190 1.48 2.3 nC SC-75 Package COMPLIANT 6.0 at VGS = 1.8 V - Small Footprint Area 0.4 - Low On-Resistance APPLI... See More ⇒

 9.3. Size:207K  vishay
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SIB456DK

SiB457EDK Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 9a TrenchFET Power MOSFET New Thermally Enhanced PowerPAK 0.049 at VGS = - 2.5 V - 9a - 20 13 nC SC-75 Package 0.079 at VGS = - 1.8 V - 9a - Small Footprint Area ... See More ⇒

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Detailed specifications: SIB417EDK, SIB419DK, SIB422EDK, SIB433EDK, SIB437EDKT, SIB441EDK, SIB452DK, SIB455EDK, 2N7002, SIB457EDK, SIB488DK, SIB800EDK, SIB911DK, SIB912DK, SIB914DK, SIE726DF, SIE800DF

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