SIB456DK - параметры транзистора MOSFET, его аналоги, datasheet

SIB456DK Datasheet (PDF)

..1. Size:218K vishay
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New Product SiB456DKwww.vishay.comVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATRUESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () MAX. ID (A)a Qg (Typ.) New Thermally Enhanced PowerPAK SC-750.185 at VGS = 10 V 6.3Package100 1.8 nC0.310 at VGS = 4.5 V 4.9- Small Footprint Area- Low On-Resistance 100 % Rg and UIS TestedPowerPAK SC-75-

9.1. Size:229K vishay
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New ProductSiB457EDKVishay SiliconixP-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 9a TrenchFET Power MOSFET0.049 at VGS = - 2.5 V New Thermally Enhanced PowerPAK- 9a- 20 13 nCSC-75 Package0.072 at VGS = - 1.8 V - 9a- Small F

9.2. Size:224K vishay
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New ProductSiB452DKVishay SiliconixN-Channel 190-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET2.4 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAKRoHS2.6 at VGS = 2.5 V 190 1.48 2.3 nCSC-75 Package COMPLIANT6.0 at VGS = 1.8 V - Small Footprint Area0.4- Low On-ResistanceAPPLI

9.3. Size:207K vishay
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SiB457EDKVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 9a TrenchFET Power MOSFET New Thermally Enhanced PowerPAK0.049 at VGS = - 2.5 V - 9a- 20 13 nCSC-75 Package0.079 at VGS = - 1.8 V - 9a- Small Footprint Area