All MOSFET. SIB800EDK Datasheet

 

SIB800EDK Datasheet and Replacement


   Type Designator: SIB800EDK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: SC-75-6L
 

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SIB800EDK Datasheet (PDF)

 ..1. Size:239K  vishay
 sib800edk.pdf pdf_icon

SIB800EDK

New ProductSiB800EDKVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK0.270 at VGS = 2.5 V 1.520 1.1 nC SC-75 Package0.345 at VGS = 1.8

 6.1. Size:239K  vishay
 sib800ed.pdf pdf_icon

SIB800EDK

New ProductSiB800EDKVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK0.270 at VGS = 2.5 V 1.520 1.1 nC SC-75 Package0.345 at VGS = 1.8

Datasheet: SIB433EDK , SIB437EDKT , SIB441EDK , SIB452DK , SIB455EDK , SIB456DK , SIB457EDK , SIB488DK , 5N60 , SIB911DK , SIB912DK , SIB914DK , SIE726DF , SIE800DF , SIE802DF , SIE804DF , SIE806DF .

History: FDU6N50F | IPB017N08N5 | FDU6676AS | IRFS742 | 2N60G-E-K08-5060-R

Keywords - SIB800EDK MOSFET datasheet

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