SIB800EDK Datasheet. Specs and Replacement

Type Designator: SIB800EDK  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm

Package: SC-75-6L

SIB800EDK substitution

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SIB800EDK datasheet

 ..1. Size:239K  vishay
 sib800edk.pdf pdf_icon

SIB800EDK

New Product SiB800EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a LITTLE FOOT Plus Schottky Power MOSFET 0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK 0.270 at VGS = 2.5 V 1.5 20 1.1 nC SC-75 Package 0.345 at VGS = 1.8 ... See More ⇒

 6.1. Size:239K  vishay
 sib800ed.pdf pdf_icon

SIB800EDK

New Product SiB800EDK Vishay Siliconix N-Channel 20-V (D-S) MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Qg (Typ.) ID (A)a LITTLE FOOT Plus Schottky Power MOSFET 0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK 0.270 at VGS = 2.5 V 1.5 20 1.1 nC SC-75 Package 0.345 at VGS = 1.8 ... See More ⇒

Detailed specifications: SIB433EDK, SIB437EDKT, SIB441EDK, SIB452DK, SIB455EDK, SIB456DK, SIB457EDK, SIB488DK, IRLB4132, SIB911DK, SIB912DK, SIB914DK, SIE726DF, SIE800DF, SIE802DF, SIE804DF, SIE806DF

Keywords - SIB800EDK MOSFET specs

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