All MOSFET. SIB800EDK Datasheet

 

SIB800EDK MOSFET. Datasheet pdf. Equivalent


   Type Designator: SIB800EDK
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1.1 nC
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
   Package: SC-75-6L

 SIB800EDK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SIB800EDK Datasheet (PDF)

 ..1. Size:239K  vishay
 sib800edk.pdf

SIB800EDK SIB800EDK

New ProductSiB800EDKVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK0.270 at VGS = 2.5 V 1.520 1.1 nC SC-75 Package0.345 at VGS = 1.8

 6.1. Size:239K  vishay
 sib800ed.pdf

SIB800EDK SIB800EDK

New ProductSiB800EDKVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK0.270 at VGS = 2.5 V 1.520 1.1 nC SC-75 Package0.345 at VGS = 1.8

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STM8358S

 

 
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