SIB800EDK Datasheet and Replacement
Type Designator: SIB800EDK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 6 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.225 Ohm
Package: SC-75-6L
SIB800EDK substitution
SIB800EDK Datasheet (PDF)
sib800edk.pdf
New ProductSiB800EDKVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK0.270 at VGS = 2.5 V 1.520 1.1 nC SC-75 Package0.345 at VGS = 1.8
sib800ed.pdf
New ProductSiB800EDKVishay SiliconixN-Channel 20-V (D-S) MOSFET with Trench Schottky DiodeFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Qg (Typ.)ID (A)a LITTLE FOOT Plus Schottky Power MOSFET0.225 at VGS = 4.5 V 1.5 New Thermally Enhanced PowerPAK0.270 at VGS = 2.5 V 1.520 1.1 nC SC-75 Package0.345 at VGS = 1.8
Datasheet: SIB433EDK , SIB437EDKT , SIB441EDK , SIB452DK , SIB455EDK , SIB456DK , SIB457EDK , SIB488DK , 5N60 , SIB911DK , SIB912DK , SIB914DK , SIE726DF , SIE800DF , SIE802DF , SIE804DF , SIE806DF .
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