SIE802DF Datasheet. Specs and Replacement

Type Designator: SIE802DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 42.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 195 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm

Package: POLARPAK

SIE802DF substitution

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SIE802DF datasheet

 ..1. Size:187K  vishay
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SIE802DF

SiE802DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition TrenchFET Gen II Power MOSFET Silicon Package VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top- Exposed PolarPAK Package for Double-Sided 0.0019 at VGS = 10 V 202 60 Cooling 30 50 nC 0.002... See More ⇒

 9.1. Size:187K  vishay
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SIE802DF

SiE806DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A) Definition Silicon Package TrenchFET Gen II Power MOSFET VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top- 0.0017 at VGS = 10 V Exposed PolarPAK Package for Double-Sided 202 60 30 75 nC Cooling 0.0021 ... See More ⇒

 9.2. Size:187K  vishay
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SIE802DF

SiE808DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition TrenchFET Gen II Power MOSFET Silicon Package VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top- Exposed PolarPAK Package for Double- 0.0016 at VGS = 10 V 220 60 Sided Cooling 20 46 nC 0.0... See More ⇒

 9.3. Size:164K  vishay
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SIE802DF

SiE800DF Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package Extremely Low Qgd for Low Switching Losses VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit TrenchFET Power MOSFET Ultra Low Thermal Resistance Using Top- 0.0072 at VGS = 10 V 90 50 30 12 nC Exposed PolarPAK P... See More ⇒

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Detailed specifications: SIB457EDK, SIB488DK, SIB800EDK, SIB911DK, SIB912DK, SIB914DK, SIE726DF, SIE800DF, SKD502T, SIE804DF, SIE806DF, SIE808DF, SIE810DF, SIE812DF, SIE816DF, SIE818DF, SIE820DF

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