SIE806DF Datasheet. Specs and Replacement

Type Designator: SIE806DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 41.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2 V

Qg ⓘ - Total Gate Charge: 165 nC

tr ⓘ - Rise Time: 160 nS

Cossⓘ - Output Capacitance: 1150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm

Package: POLARPAK

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SIE806DF datasheet

 ..1. Size:187K  vishay
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SIE806DF

SiE806DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A) Definition Silicon Package TrenchFET Gen II Power MOSFET VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top- 0.0017 at VGS = 10 V Exposed PolarPAK Package for Double-Sided 202 60 30 75 nC Cooling 0.0021 ... See More ⇒

 9.1. Size:187K  vishay
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SIE806DF

SiE808DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition TrenchFET Gen II Power MOSFET Silicon Package VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top- Exposed PolarPAK Package for Double- 0.0016 at VGS = 10 V 220 60 Sided Cooling 20 46 nC 0.0... See More ⇒

 9.2. Size:164K  vishay
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SIE806DF

SiE800DF Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package Extremely Low Qgd for Low Switching Losses VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit TrenchFET Power MOSFET Ultra Low Thermal Resistance Using Top- 0.0072 at VGS = 10 V 90 50 30 12 nC Exposed PolarPAK P... See More ⇒

 9.3. Size:181K  vishay
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SIE806DF

New Product SiE804DF Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.038 at VGS = 10 V Ultra Low Thermal Resistance Using 37 150 46 nC Top-Exposed PolarPAK Package for 0.040 at VGS = 6 V 36 Double-Sided Cooling Leadframe-Based... See More ⇒

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Detailed specifications: SIB800EDK, SIB911DK, SIB912DK, SIB914DK, SIE726DF, SIE800DF, SIE802DF, SIE804DF, 13N50, SIE808DF, SIE810DF, SIE812DF, SIE816DF, SIE818DF, SIE820DF, SIE822DF, SIE830DF

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