SIE836DF Datasheet. Specs and Replacement

Type Designator: SIE836DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: POLARPAK

SIE836DF substitution

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SIE836DF datasheet

 ..1. Size:212K  vishay
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SIE836DF

New Product SiE836DF Vishay Siliconix N-Channel 200-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.130 at VGS = 10 V 200 18.3 27 nC TrenchFET Power MOSFET Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for Double-Sided Cooling Package Drawing Leadframe-Ba... See More ⇒

 9.1. Size:176K  vishay
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SIE836DF

SiE830DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package Extremely Low Qgd WFET Technology for VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Low Switching Losses Ultra Low Thermal Resistance Using Top- 0.0042 at VGS = 10 V 120 50 30 33 nC Exposed PolarPAK Package for... See More ⇒

 9.2. Size:175K  vishay
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SIE836DF

SiE832DF Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Ultra Low Thermal Resistance Using Top- 0.0055 at VGS = 10 V 103 Exposed PolarPAK Package for Double- 50 40 25 nC Sided Cooling 0.007 at VG... See More ⇒

Detailed specifications: SIE810DF, SIE812DF, SIE816DF, SIE818DF, SIE820DF, SIE822DF, SIE830DF, SIE832DF, AON7506, SIE844DF, SIE848DF, SIE854DF, SIE860DF, SIE862DF, SIE864DF, SIE868DF, SIE874DF

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