SIE848DF Datasheet. Specs and Replacement

Type Designator: SIE848DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 1100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm

Package: POLARPAK

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SIE848DF datasheet

 ..1. Size:203K  vishay
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SIE848DF

New Product SiE848DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package TrenchFET Gen III Power MOSFET VDS (V) RDS(on) ( )e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top- Exposed PolarPAK Package for Double- 0.0016 at VGS = 10 V 211 60 30 43 nC Sided ... See More ⇒

 9.1. Size:203K  vishay
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SIE848DF

New Product SiE844DF Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.007 at VGS = 10 V 44.5 TrenchFET Gen II Power MOSFET 30 13.1 nC Ultra Low Thermal Resistance Using Top- 0.010 at VGS = 4.5 V 37.3 Exposed PolarPAK Package for Double- Sided Coo... See More ⇒

Detailed specifications: SIE816DF, SIE818DF, SIE820DF, SIE822DF, SIE830DF, SIE832DF, SIE836DF, SIE844DF, IRFP450, SIE854DF, SIE860DF, SIE862DF, SIE864DF, SIE868DF, SIE874DF, SIE876DF, SIE878DF

Keywords - SIE848DF MOSFET specs

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