All MOSFET. SIE848DF Datasheet

 

SIE848DF Datasheet and Replacement


   Type Designator: SIE848DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 43 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
   Package: POLARPAK
 

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SIE848DF Datasheet (PDF)

 ..1. Size:203K  vishay
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SIE848DF

New ProductSiE848DFVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)aDefinitionSilicon Package TrenchFET Gen III Power MOSFETVDS (V) RDS(on) ()e Limit Limit Qg (Typ.) Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for Double-0.0016 at VGS = 10 V 211 6030 43 nCSided

 9.1. Size:203K  vishay
 sie844df.pdf pdf_icon

SIE848DF

New ProductSiE844DFVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.007 at VGS = 10 V 44.5 TrenchFET Gen II Power MOSFET30 13.1 nC Ultra Low Thermal Resistance Using Top-0.010 at VGS = 4.5 V 37.3Exposed PolarPAK Package for Double-Sided Coo

Datasheet: SIE816DF , SIE818DF , SIE820DF , SIE822DF , SIE830DF , SIE832DF , SIE836DF , SIE844DF , IRF1407 , SIE854DF , SIE860DF , SIE862DF , SIE864DF , SIE868DF , SIE874DF , SIE876DF , SIE878DF .

History: NVD14N03R | GSM9435WS | APT20M18B2VRG | IPP65R660CFD | MIC94052BC6TR | APT14F100B | TK20S04K3L

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