SIE874DF
MOSFET. Datasheet pdf. Equivalent
Type Designator: SIE874DF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 5.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 52
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 95
nC
trⓘ - Rise Time: 35
nS
Cossⓘ -
Output Capacitance: 1800
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.00117
Ohm
Package: POLARPAK
SIE874DF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SIE874DF
Datasheet (PDF)
..1. Size:113K vishay
sie874df.pdf
New ProductSiE874DFVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)aDefinitionSilicon Package TrenchFET Gen III Power MOSFETVDS (V) RDS(on) () Qg (Typ.)Limit Limit Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for 0.00117 at VGS = 10 V 258 6020 45 nCDouble-Sid
9.1. Size:198K vishay
sie876df.pdf
New ProductSiE876DFVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)DefinitionSilicon Package TrenchFET Power MOSFETVDS (V) RDS(on) () Qg (Typ.)Limit Limit Ultra Low Thermal Resistance Using Top-0.0061 at VGS = 10 V 60 110 60 51 nCExposed PolarPAK Package for Double-Sided Cooling
9.2. Size:182K vishay
sie878df.pdf
New ProductSiE878DFVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0052 at VGS = 10 V 45 TrenchFET Gen III Power MOSFET25 11.2 nC Ultra Low Thermal Resistance Using Top-0.0068 at VGS = 4.5 V 45Exposed PolarPAK Package for Double-Sided Coo
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