All MOSFET. SIE876DF Datasheet

 

SIE876DF Datasheet and Replacement


   Type Designator: SIE876DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm
   Package: POLARPAK
 

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SIE876DF Datasheet (PDF)

 ..1. Size:198K  vishay
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SIE876DF

New ProductSiE876DFVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21ID (A)DefinitionSilicon Package TrenchFET Power MOSFETVDS (V) RDS(on) () Qg (Typ.)Limit Limit Ultra Low Thermal Resistance Using Top-0.0061 at VGS = 10 V 60 110 60 51 nCExposed PolarPAK Package for Double-Sided Cooling

 9.1. Size:113K  vishay
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SIE876DF

New ProductSiE874DFVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)aDefinitionSilicon Package TrenchFET Gen III Power MOSFETVDS (V) RDS(on) () Qg (Typ.)Limit Limit Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for 0.00117 at VGS = 10 V 258 6020 45 nCDouble-Sid

 9.2. Size:182K  vishay
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SIE876DF

New ProductSiE878DFVishay SiliconixN-Channel 25-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0052 at VGS = 10 V 45 TrenchFET Gen III Power MOSFET25 11.2 nC Ultra Low Thermal Resistance Using Top-0.0068 at VGS = 4.5 V 45Exposed PolarPAK Package for Double-Sided Coo

Datasheet: SIE844DF , SIE848DF , SIE854DF , SIE860DF , SIE862DF , SIE864DF , SIE868DF , SIE874DF , 2SK3568 , SIE878DF , SIE882DF , SIHA12N50E , SIHA12N60E , SIHA15N50E , SIHA15N60E , SIHA20N50E , SIHA22N60E .

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