SIE876DF Datasheet. Specs and Replacement

Type Designator: SIE876DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0061 Ohm

Package: POLARPAK

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SIE876DF datasheet

 ..1. Size:198K  vishay
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SIE876DF

New Product SiE876DF Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A) Definition Silicon Package TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Ultra Low Thermal Resistance Using Top- 0.0061 at VGS = 10 V 60 110 60 51 nC Exposed PolarPAK Package for Double- Sided Cooling... See More ⇒

 9.1. Size:113K  vishay
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SIE876DF

New Product SiE874DF Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 ID (A)a Definition Silicon Package TrenchFET Gen III Power MOSFET VDS (V) RDS(on) ( ) Qg (Typ.) Limit Limit Ultra Low Thermal Resistance Using Top-Exposed PolarPAK Package for 0.00117 at VGS = 10 V 258 60 20 45 nC Double-Sid... See More ⇒

 9.2. Size:182K  vishay
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SIE876DF

New Product SiE878DF Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0052 at VGS = 10 V 45 TrenchFET Gen III Power MOSFET 25 11.2 nC Ultra Low Thermal Resistance Using Top- 0.0068 at VGS = 4.5 V 45 Exposed PolarPAK Package for Double- Sided Coo... See More ⇒

Detailed specifications: SIE844DF, SIE848DF, SIE854DF, SIE860DF, SIE862DF, SIE864DF, SIE868DF, SIE874DF, 2SK3568, SIE878DF, SIE882DF, SIHA12N50E, SIHA12N60E, SIHA15N50E, SIHA15N60E, SIHA20N50E, SIHA22N60E

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