SIHA15N60E PDF and Equivalents Search

 

SIHA15N60E Specs and Replacement

Type Designator: SIHA15N60E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 70 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-220FP

SIHA15N60E substitution

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SIHA15N60E datasheet

 ..1. Size:170K  vishay
 siha15n60e.pdf pdf_icon

SIHA15N60E

SiHA15N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Qg max. (nC) 76 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 17 ... See More ⇒

 7.1. Size:164K  vishay
 siha15n50e.pdf pdf_icon

SIHA15N60E

SiHA15N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.243 Reduced switching and conduction losses Qg max. (nC) 66 Low gate charge (Qg) Qgs (nC) 8 Avalanche energy rated (UIS) Qgd (nC) 14 Materi... See More ⇒

 9.1. Size:141K  vishay
 siha11n80e.pdf pdf_icon

SIHA15N60E

SiHA11N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D Thin-Lead TO-220 FULLPAK Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses G Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization for definitions of compliance S please see www.vishay.com/doc?99912 ... See More ⇒

 9.2. Size:171K  vishay
 siha12n60e.pdf pdf_icon

SIHA15N60E

SiHA12N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.38 Reduced switching and conduction losses Qg max. (nC) 58 Ultra low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 13 M... See More ⇒

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Detailed specifications: SIE868DF , SIE874DF , SIE876DF , SIE878DF , SIE882DF , SIHA12N50E , SIHA12N60E , SIHA15N50E , 18N50 , SIHA20N50E , SIHA22N60E , SIHA25N50E , SIHB10N40D , SIHB12N50C , SIHB12N50E , SIHB12N60E , SIHB12N65E .

History: TK11P65W | AP9N20P | 3N50Z

Keywords - SIHA15N60E MOSFET specs

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