All MOSFET. SIHB12N50E Datasheet

 

SIHB12N50E Datasheet and Replacement


   Type Designator: SIHB12N50E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 114 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 52 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-263
 

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SIHB12N50E Datasheet (PDF)

 ..1. Size:200K  vishay
 sihb12n50e.pdf pdf_icon

SIHB12N50E

SiHB12N50Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 550 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.380 Reduced switching and conduction lossesQg max. (nC) 50 Low gate charge (Qg)Qgs (nC) 6 Avalanche energy rated (UIS)Qgd (nC) 10 Materi

 5.1. Size:154K  vishay
 sihp12n50c sihb12n50c sihf12n50c.pdf pdf_icon

SIHB12N50E

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK

 5.2. Size:179K  vishay
 sihb12n50c sihf12n50c sihp12n50c.pdf pdf_icon

SIHB12N50E

SiHP12N50C, SiHB12N50C, SiHF12N50CVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Figure-of-Merit Ron x QgVDS (V) at TJ max. 560 VRDS(on) ()VGS = 10 V 0.555 100 % Avalanche TestedQg (Max.) (nC) 48 Gate Charge ImprovedQgs (nC) 12 Trr/Qrr ImprovedQgd (nC) 15Configuration Single Compliant to RoHS Directive 2002/95/ECTO-220AB TO-220 FULLPAK

 7.1. Size:150K  vishay
 sihb12n65e.pdf pdf_icon

SIHB12N50E

SiHB12N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.38 Reduced switching and conduction lossesQg max. (nC) 70 Ultra low gate charge (Qg)Qgs (nC) 9 Avalanche energy rated (UIS)Qgd (nC) 16 M

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Datasheet: SIHA12N60E , SIHA15N50E , SIHA15N60E , SIHA20N50E , SIHA22N60E , SIHA25N50E , SIHB10N40D , SIHB12N50C , IRF830 , SIHB12N60E , SIHB12N65E , SIHB15N50E , SIHB15N60E , SIHB15N65E , SIHB16N50C , SIHB20N50E , SIHB22N60E .

History: FTP08N06A

Keywords - SIHB12N50E MOSFET datasheet

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