SIHB16N50C PDF and Equivalents Search

 

SIHB16N50C Specs and Replacement

Type Designator: SIHB16N50C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 250 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 156 nS

Cossⓘ - Output Capacitance: 230 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO-263

SIHB16N50C substitution

- MOSFET ⓘ Cross-Reference Search

 

SIHB16N50C datasheet

 ..1. Size:292K  vishay
 sihp16n50c sihb16n50c sihf16n50c.pdf pdf_icon

SIHB16N50C

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒

 ..2. Size:175K  vishay
 sihb16n50c sihf16n50c sihp16n50c.pdf pdf_icon

SIHB16N50C

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 RDS(on) ( )VGS = 10 V 0.38 100 % Avalanche Tested Qg (Max.) (nC) 68 Gate Charge Improved Qgs (nC) 17.6 Trr/Qrr Improved Qgd (nC) 21.8 Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220A... See More ⇒

 9.1. Size:144K  vishay
 sihb10n40d.pdf pdf_icon

SIHB16N50C

SiHB10N40D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 450 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.6 - Low Input Capacitance (Ciss) Qg max. (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con... See More ⇒

 9.2. Size:200K  vishay
 sihb12n50e.pdf pdf_icon

SIHB16N50C

SiHB12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.380 Reduced switching and conduction losses Qg max. (nC) 50 Low gate charge (Qg) Qgs (nC) 6 Avalanche energy rated (UIS) Qgd (nC) 10 Materi... See More ⇒

SHOW MORE

Detailed specifications: SIHB10N40D , SIHB12N50C , SIHB12N50E , SIHB12N60E , SIHB12N65E , SIHB15N50E , SIHB15N60E , SIHB15N65E , STP65NF06 , SIHB20N50E , SIHB22N60E , SIHB22N60S , SIHB22N65E , SIHB23N60E , SIHB24N65E , SIHB28N60EF , SIHB30N60E .

Keywords - SIHB16N50C MOSFET specs

 SIHB16N50C cross reference
 SIHB16N50C equivalent finder
 SIHB16N50C pdf lookup
 SIHB16N50C substitution
 SIHB16N50C replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
↑ Back to Top
.